Improvements in Stability and Performance of N,N′‐Dialkyl Perylene Diimide‐Based n‐Type Thin‐Film Transistors

The stability and performance of N,N′‐dioctyl perylene diimide (PDI‐C8) and N,N′‐ditridecyl perylene diimide (PDI‐C13) thin‐film transistors (TFTs) are increased using optimized growth rates and sulfur‐modified top‐contact electrodes. Changing the grain size and the depth of grain boundaries by cont...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2009-04, Vol.21 (16), p.1631-1635
Main Authors: Wen, Yugeng, Liu, Yunqi, Di, Chong‐an, Wang, Ying, Sun, Xiangnan, Guo, Yunlong, Zheng, Jian, Wu, Weiping, Ye, Shanghui, Yu, Gui
Format: Article
Language:English
Subjects:
N,N′‐dialkyl perylene diimide
n‐Type
Stability
Thin films
Transistors
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Summary:The stability and performance of N,N′‐dioctyl perylene diimide (PDI‐C8) and N,N′‐ditridecyl perylene diimide (PDI‐C13) thin‐film transistors (TFTs) are increased using optimized growth rates and sulfur‐modified top‐contact electrodes. Changing the grain size and the depth of grain boundaries by controlling film growth rate is another way of increasing the air stability of perylene diimides without electron‐withdrawing groups.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200802934