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Molecular beam epitaxy growth of neodymium-doped yttrium aluminum perovskite

Epitaxial neodymium-doped yttrium aluminum perovskite ( Nd : YAlO 3 ) has been grown by plasma-assisted molecular beam epitaxy on R-plane sapphire at 985 ∘ C . The substrates were annealed in air at 1150 ∘ C to generate atomically ordered surfaces. Structural and optical characterization was perform...

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Bibliographic Details
Published in:Journal of crystal growth 2009-03, Vol.311 (7), p.2191-2194
Main Authors: Kumaran, R., Webster, S.E., Penson, S., Li, Wei, Tiedje, T.
Format: Article
Language:English
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Summary:Epitaxial neodymium-doped yttrium aluminum perovskite ( Nd : YAlO 3 ) has been grown by plasma-assisted molecular beam epitaxy on R-plane sapphire at 985 ∘ C . The substrates were annealed in air at 1150 ∘ C to generate atomically ordered surfaces. Structural and optical characterization was performed using X-ray diffraction and photoluminescence. Emission spectra identical to that from bulk crystalline Nd : YAlO 3 were obtained.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2008.11.044