Muons for spintronics: Photo-induced conduction electron polarization in n-type GaAs observed by the muonium method

The spin-dependent exchange scattering between the muonium (Mu) electron and polarized conduction electrons excited by circularly polarized 831 nm laser light was observed in n-type GaAs with 3.6×10 16 cm −3 Si doping at low temperature by measuring a change in the polarization of Mu against the con...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2009-04, Vol.404 (5), p.856-858
Main Authors: Yokoyama, K., Nagamine, K., Shimomura, K., Tom, H.W.K., Kawakami, R., Bakule, P., Matsuda, Y., Pratt, F.L., Torikai, E.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conduction electron polarization
Electron states
Exact sciences and technology
GaAs
Iii-v semiconductors
Impurity and defect levels
Laser musr
Magnetic resonances and relaxations in condensed matter, mössbauer effect
Muon spin rotation and relaxation
Physics
Spin-exchange scattering
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Summary:The spin-dependent exchange scattering between the muonium (Mu) electron and polarized conduction electrons excited by circularly polarized 831 nm laser light was observed in n-type GaAs with 3.6×10 16 cm −3 Si doping at low temperature by measuring a change in the polarization of Mu against the conduction electron polarization (CEP) direction. Correct signal response was confirmed with respect to the laser power. These results are encouraging for the Mu technique to be applied to probe CEP in various spintronics material systems.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2008.11.153