InSb quantum-well structures for electronic device applications

The small effective mass of electrons in InSb results in a high electron mobility if the densities of crystalline defects and other scattering sources are sufficiently reduced. The performance of geometrical magnetoresistors was used to confirm the high electron mobility in InSb quantum-well structu...

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Bibliographic Details
Published in:Journal of crystal growth 2009-03, Vol.311 (7), p.1972-1975
Main Authors: Edirisooriya, M., Mishima, T.D., Gaspe, C.K., Bottoms, K., Hauenstein, R.J., Santos, M.B.
Format: Article
Language:English
Subjects:
61.72.Dd
73.63.Hs
81.15.Hi
A1. Low dimensional structures
A3. Molecular beam epitaxy
Applied sciences
B1. Antimonides
B2. Semiconducting indium compounds
B3. High electron mobility transistors
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Nanoscale materials and structures: fabrication and characterization
Other topics in nanoscale materials and structures
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The small effective mass of electrons in InSb results in a high electron mobility if the densities of crystalline defects and other scattering sources are sufficiently reduced. The performance of geometrical magnetoresistors was used to confirm the high electron mobility in InSb quantum-well structures grown on GaAs substrates with defect-reducing buffer layers. High-resolution X-ray diffraction measurements indicated that strain relaxation in such structures can be anisotropic. Two-dimensional hole systems were realized by doping the barrier layers with Be instead of Si.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2008.11.081