Optical characterization of InGaAsN layers grown on InP substrates

• Published in: Journal of crystal growth 2009-03, Vol.311 (7), p.1745-1747
• Main Authors: Yoshikawa, M., Miura, K., Iguchi, Y., Kawamura, Y.
• Format: Article
• Language: English
• Subjects: A3. Molecular beam epitaxy; B2. Semiconducting indium phosphide; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Photoluminescence; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.10.117

Optical characterization of InGaAsN layers on InP substrates grown by molecular beam epitaxy (MBE) was carried out using photoluminescence (PL) and photoreflectance (PR) measurements. The PL wavelength coincides well with the energy gap ( E g) obtained by the PR measurement for the samples grown with various nitrogen compositions and growth temperatures. In particular, the sample which has the longest PL wavelength (2.03 μm at 300 K) shows a clear PR spectrum and the E g obtained by the PR measurement corresponds well with the PL peak energy, indicating that the emission at 2.03 μm is not a defect related emission but a band-edge emission of the InGaAsN layer.