Quantum transport and spin-orbit interaction in Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells

• Published in: Journal of crystal growth 2009-03, Vol.311 (7), p.2128-2131
• Main Authors: NISHIZAKO, N, MANAGO, T, ISHIDA, S, GEKA, H, SHIBASAKI, I
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Magnetic properties and materials; Magnetotransport phenomena, materials for magnetotransport; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Other topics in nanoscale materials and structures; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.10.057

We have investigated the spin-orbit interaction in strain-free Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells with different widths. The weak anti-localization (WAL) effect was clearly observed in the magneto-resistance for all samples. The inelastic scattering time is close to the T-1 law predicted theoretically for electron-electron interaction in the diffusive regime, and the spin-orbit scattering time is temperature independent as expected for the D'yakonov-Perel mechanism. The zero-field spin-splitting energies extracted from these observations were around 1.0 meV. The WAL behavior becomes distinct in samples with wider well width, and the zero-field spin-splitting energy slightly increases with well width. This seems to reflect increase of the carrier concentration.