Thermal Properties of GaN Films Grown on Si Substrates

GaN films grown on Si substrates by molecular beam epitaxy with different nitridation times have been investigated. The GaN/Si structural and optical properties were evaluated by transmission electron microscopy, X-ray diffraction, atomic force microscopy, and photoluminescence. The effective therma...

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Bibliographic Details
Published in:International journal of thermophysics 2009-04, Vol.30 (2), p.591-598
Main Authors: Cervantes-Contreras, M., Quezada-Maya, C. A., Mejía-García, C., López-López, M., González de la Cruz, G., Tamura, M.
Format: Article
Language:English
Subjects:
Classical Mechanics
Condensed Matter Physics
Industrial Chemistry/Chemical Engineering
Physical Chemistry
Physics
Physics and Astronomy
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Summary:GaN films grown on Si substrates by molecular beam epitaxy with different nitridation times have been investigated. The GaN/Si structural and optical properties were evaluated by transmission electron microscopy, X-ray diffraction, atomic force microscopy, and photoluminescence. The effective thermal conductivity of the GaN/Si system was obtained using the photoacoustic technique, and from these results the nitridation time dependence of the interface thermal conductivity ( η ) can be evaluated using a two-layer model. An optimal nitridation time for which the GaN crystal quality can be improved was obtained. The variation of the parameter η for different nitridation times can be related to the interface phonon scattering process by the presence of disorder at the GaN/Si interface.
ISSN:0195-928X
1572-9567
DOI:10.1007/s10765-008-0519-5