Charge Collection From Within a Collecting Junction Well

This paper provides the analytical equation for the charge collection from a collecting region with a finite dimension. Electron-beam-induced current has widely been used for semiconductor characterization. The availability of analytical expressions would further enhance the study and development of...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-05, Vol.55 (5), p.1220-1228
Main Authors: Kurniawan, O., Ong, V.K.S.
Format: Article
Language:English
Subjects:
Applied sciences
Charge
Charge-carrier processes
Collection
Computer simulation
Devices
Electrical junctions
electron beam application
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Exact solutions
Mathematical analysis
semiconductor material measurements
Semiconductors
simulation
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Summary:This paper provides the analytical equation for the charge collection from a collecting region with a finite dimension. Electron-beam-induced current has widely been used for semiconductor characterization. The availability of analytical expressions would further enhance the study and development of various measurement techniques. Nevertheless, most devices are fabricated with junctions that have finite dimensions, which are usually either L shaped or U shaped. For these cases, the analytical expressions are lacking. This paper provides the derivation of the electric current profile when an electron beam scans from within the collecting region for these two cases. The computation was verified with a semiconductor device simulation program on a computer and was found to be in good agreement. This paper then gives a discussion on the effects of certain parameters such as the junction depth and junction width, the diffusion length, and the depth of the generation volume.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.918660