Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs

This paper presents a new self-consistent multisubband Monte Carlo model for electronic transport in the inversion layer of decananometric MOSFETs. The simulator is 2D in real space and in k-space and accounts for the electron-gas degeneracy in the k-space. Simulation of nanoscale ultra-thin-body si...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-05, Vol.54 (5), p.1156-1164
Main Authors: Lucci, L., Palestri, P., Esseni, D., Bergagnini, L., Selmi, L.
Format: Article
Language:English
Subjects:
Applied sciences
Back-scattering
ballistic transport
Channels
Computer simulation
Electronics
Exact sciences and technology
Monte Carlo (MC) method
Monte Carlo methods
MOSFETs
Nanocomposites
Nanomaterials
Nanostructure
scattering
semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon-on-insulator (SOI)
Transistors
Transport
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Description
Summary:This paper presents a new self-consistent multisubband Monte Carlo model for electronic transport in the inversion layer of decananometric MOSFETs. The simulator is 2D in real space and in k-space and accounts for the electron-gas degeneracy in the k-space. Simulation of nanoscale ultra-thin-body silicon-on-insulator MOSFETs shows that the subband structure and the carrier degeneracy strongly affect the transport properties and, in particular, the injection velocity and the channel back-scattering
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.894606