Robust MOSFET Driver for RF, Class-D Inverters

The gate driver presented here allows the operation of a half-bridge resonant inverter at 13.56 MHz using standard package switching devices. Similar to other sinusoidal drivers, it inherently provides dead time between conduction of the power devices and consumes relatively low power with respect t...

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Bibliographic Details
Published in:IEEE transactions on industrial electronics (1982) 2008-02, Vol.55 (2), p.731-740
Main Authors: Theodoridis, M.P., Mollov, S.V.
Format: Article
Language:English
Subjects:
Devices
Driver
Driver circuits
Drivers
FCC
inverter
Inverters
MOSFET
MOSFET circuits
MOSFETs
Packages
Packaging
Prototypes
Radio frequencies
Radio frequency
Radiofrequency amplifiers
Resonant inverters
Robustness
Tolerances
Topology
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Description
Summary:The gate driver presented here allows the operation of a half-bridge resonant inverter at 13.56 MHz using standard package switching devices. Similar to other sinusoidal drivers, it inherently provides dead time between conduction of the power devices and consumes relatively low power with respect to square wave drivers. One advantage of the presented topology is that it exhibits high tolerance of the Miller effect of the driven devices and can therefore drive high capacitance, low-cost MOSFETs at radio frequencies. Another advantage of this driver is that it uses modestly rated devices. The concepts developed in this paper are demonstrated with two 13.56 MHz, 300 W/500 W prototype inverters with efficiencies above 85%.
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2007.896137