Active Charge/Discharge IGBT Modulator for Marx Generator and Plasma Applications

In this paper, we present a Marx-stackable insulated-gate-bipolar-transistors-based modulator for plasma ion implantation and other pulsed high voltage-high peak power applications. Active control of charging and discharging cycles permits rigid pulse forms, arbitrary duty cycles and internal effici...

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Bibliographic Details
Published in:IEEE transactions on plasma science 2007-04, Vol.35 (2), p.473-478
Main Authors: Steenkamp, C.J.T., Bradley, M.P.
Format: Article
Language:English
Subjects:
Active control
Capacitor bank
Capacitors
Charge
Charging
Discharge
Electric power
Electricity
Exact sciences and technology
Generators
Insulated gate bipolar transistors
Ion implantation
Marx generator
Marx generators
Modulators
Optical pulse generation
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma
Plasma applications
Plasma immersion ion implantation
plasma ion implantation (PII)
Plasma-based ion implantation and deposition
Power generation
power modulation
Pulse modulation
Pulse transformers
pulsed power
Switches
Transformers
Transistors
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Summary:In this paper, we present a Marx-stackable insulated-gate-bipolar-transistors-based modulator for plasma ion implantation and other pulsed high voltage-high peak power applications. Active control of charging and discharging cycles permits rigid pulse forms, arbitrary duty cycles and internal efficiencies exceeding 90%. We demonstrate a 20-kV 15-A generator using a 2-kV Marx generator to drive a pulse transformer
ISSN:0093-3813
1939-9375
DOI:10.1109/TPS.2007.892739