Single-Ended and Differential Ka-Band BiCMOS Phased Array Front-Ends

Single-ended and differential phased array front-ends are developed for Ka-band applications using a 0.12 mum SiGe BiCMOS process. The phase shifters are based on CMOS switched delay networks and have 22.5deg phase resolution and

Saved in:
Bibliographic Details
Published in:IEEE journal of solid-state circuits 2008-10, Vol.43 (10), p.2239-2250
Main Authors: Byung-Wook Min, Rebeiz, G.M.
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
BiCMOS integrated circuits
Chips
Circuit properties
Circuits of signal characteristics conditioning (including delay circuits)
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Gain
Gallium arsenide
Germanium silicon alloys
Integrated circuits
Ka-band
low-noise amplifier (LNA)
Noise figure
Noise levels
Noise measurement
phase error
Phase noise
phase shifter
Phase shifters
phased array
Phased arrays
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiGe BiCMOS integrated circuit
Silicon germanides
Silicon germanium
Variable gain
variable gain amplifier
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Single-ended and differential phased array front-ends are developed for Ka-band applications using a 0.12 mum SiGe BiCMOS process. The phase shifters are based on CMOS switched delay networks and have 22.5deg phase resolution and
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2008.2004336