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A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive Radar

A single-ended 77/79 GHz monolithic microwave integrated circuit (MMIC) receiver has been developed in SiGe HBT technology for frequency-modulated continuous-wave (FMCW) automotive radars. The single-ended receiver chip consists of the first reported SiGe 77/79 GHz single-ended cascode low noise amp...

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Published in:IEEE journal of solid-state circuits 2008-09, Vol.43 (9), p.1897-1908
Main Authors: Li Wang, Glisic, S., Borngraeber, J., Winkler, W., Scheytt, J.C.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c385t-9f034e58ad68a756e3b840030a7f4f3bc8a2221a1ad8ec135b208812f32507c73
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container_issue 9
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container_title IEEE journal of solid-state circuits
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creator Li Wang
Glisic, S.
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Winkler, W.
Scheytt, J.C.
description A single-ended 77/79 GHz monolithic microwave integrated circuit (MMIC) receiver has been developed in SiGe HBT technology for frequency-modulated continuous-wave (FMCW) automotive radars. The single-ended receiver chip consists of the first reported SiGe 77/79 GHz single-ended cascode low noise amplifier (LNA), the improved single-ended RF double-balanced down-conversion 77/79 GHz micromixer, and the modified differential Colpitts 77/79 GHz voltage controlled oscillator (VCO). The LNA presents 20/21.7 dB gain and mixer has 13.4/7 dB gain at 77/79 GHz, and the VCO oscillates from 79 to 82 GHz before it is tuned by cutting the transmission line ladder, and it centres around 77 GHz with a tuning range of 3.8 GHz for the whole ambient temperature variation range from -40degC to +125degC after we cut the lines by tungsten-carbide needles. Phase noise is -90 dBc/Hz@l MHz offset. Differential output power delivered by the VCO is 5 dBm, which is an optimum level to drive the mixer. The receiver occupies 0.5 mm 2 without pads and 1.26 mm 2 with pads, and consumes 595 mW. The measurement of the whole receiver at 79 GHz shows 20-26 dB gain in the linear region with stable IF output signal. The input P 1dB of the receiver is -35 dBm.
doi_str_mv 10.1109/JSSC.2008.2003994
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The single-ended receiver chip consists of the first reported SiGe 77/79 GHz single-ended cascode low noise amplifier (LNA), the improved single-ended RF double-balanced down-conversion 77/79 GHz micromixer, and the modified differential Colpitts 77/79 GHz voltage controlled oscillator (VCO). The LNA presents 20/21.7 dB gain and mixer has 13.4/7 dB gain at 77/79 GHz, and the VCO oscillates from 79 to 82 GHz before it is tuned by cutting the transmission line ladder, and it centres around 77 GHz with a tuning range of 3.8 GHz for the whole ambient temperature variation range from -40degC to +125degC after we cut the lines by tungsten-carbide needles. Phase noise is -90 dBc/Hz@l MHz offset. Differential output power delivered by the VCO is 5 dBm, which is an optimum level to drive the mixer. The receiver occupies 0.5 mm 2 without pads and 1.26 mm 2 with pads, and consumes 595 mW. The measurement of the whole receiver at 79 GHz shows 20-26 dB gain in the linear region with stable IF output signal. The input P 1dB of the receiver is -35 dBm.</description><subject>77/79 GHz</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Automotive engineering</subject><subject>Automotive radar</subject><subject>Circuit properties</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>flip-chip</subject><subject>FMCW</subject><subject>Gain</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Integrated circuits</subject><subject>LNA</subject><subject>micro mixer</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwave integrated circuits</subject><subject>MMIC</subject><subject>MMICs</subject><subject>Monolithic integrated circuits</subject><subject>Radar</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>flip-chip</topic><topic>FMCW</topic><topic>Gain</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Integrated circuits</topic><topic>LNA</topic><topic>micro mixer</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwave integrated circuits</topic><topic>MMIC</topic><topic>MMICs</topic><topic>Monolithic integrated circuits</topic><topic>Radar</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. 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The single-ended receiver chip consists of the first reported SiGe 77/79 GHz single-ended cascode low noise amplifier (LNA), the improved single-ended RF double-balanced down-conversion 77/79 GHz micromixer, and the modified differential Colpitts 77/79 GHz voltage controlled oscillator (VCO). The LNA presents 20/21.7 dB gain and mixer has 13.4/7 dB gain at 77/79 GHz, and the VCO oscillates from 79 to 82 GHz before it is tuned by cutting the transmission line ladder, and it centres around 77 GHz with a tuning range of 3.8 GHz for the whole ambient temperature variation range from -40degC to +125degC after we cut the lines by tungsten-carbide needles. Phase noise is -90 dBc/Hz@l MHz offset. Differential output power delivered by the VCO is 5 dBm, which is an optimum level to drive the mixer. The receiver occupies 0.5 mm 2 without pads and 1.26 mm 2 with pads, and consumes 595 mW. 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identifier ISSN: 0018-9200
ispartof IEEE journal of solid-state circuits, 2008-09, Vol.43 (9), p.1897-1908
issn 0018-9200
1558-173X
language eng
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source IEEE Xplore (Online service)
subjects 77/79 GHz
Amplifiers
Applied sciences
Automotive engineering
Automotive radar
Circuit properties
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
flip-chip
FMCW
Gain
Germanium silicon alloys
Heterojunction bipolar transistors
Integrated circuits
LNA
micro mixer
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave integrated circuits
MMIC
MMICs
Monolithic integrated circuits
Radar
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiGe
Silicon germanium
Transistors
VCO
Voltage-controlled oscillators
title A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive Radar
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