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A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive Radar
A single-ended 77/79 GHz monolithic microwave integrated circuit (MMIC) receiver has been developed in SiGe HBT technology for frequency-modulated continuous-wave (FMCW) automotive radars. The single-ended receiver chip consists of the first reported SiGe 77/79 GHz single-ended cascode low noise amp...
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Published in: | IEEE journal of solid-state circuits 2008-09, Vol.43 (9), p.1897-1908 |
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container_end_page | 1908 |
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container_start_page | 1897 |
container_title | IEEE journal of solid-state circuits |
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creator | Li Wang Glisic, S. Borngraeber, J. Winkler, W. Scheytt, J.C. |
description | A single-ended 77/79 GHz monolithic microwave integrated circuit (MMIC) receiver has been developed in SiGe HBT technology for frequency-modulated continuous-wave (FMCW) automotive radars. The single-ended receiver chip consists of the first reported SiGe 77/79 GHz single-ended cascode low noise amplifier (LNA), the improved single-ended RF double-balanced down-conversion 77/79 GHz micromixer, and the modified differential Colpitts 77/79 GHz voltage controlled oscillator (VCO). The LNA presents 20/21.7 dB gain and mixer has 13.4/7 dB gain at 77/79 GHz, and the VCO oscillates from 79 to 82 GHz before it is tuned by cutting the transmission line ladder, and it centres around 77 GHz with a tuning range of 3.8 GHz for the whole ambient temperature variation range from -40degC to +125degC after we cut the lines by tungsten-carbide needles. Phase noise is -90 dBc/Hz@l MHz offset. Differential output power delivered by the VCO is 5 dBm, which is an optimum level to drive the mixer. The receiver occupies 0.5 mm 2 without pads and 1.26 mm 2 with pads, and consumes 595 mW. The measurement of the whole receiver at 79 GHz shows 20-26 dB gain in the linear region with stable IF output signal. The input P 1dB of the receiver is -35 dBm. |
doi_str_mv | 10.1109/JSSC.2008.2003994 |
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The single-ended receiver chip consists of the first reported SiGe 77/79 GHz single-ended cascode low noise amplifier (LNA), the improved single-ended RF double-balanced down-conversion 77/79 GHz micromixer, and the modified differential Colpitts 77/79 GHz voltage controlled oscillator (VCO). The LNA presents 20/21.7 dB gain and mixer has 13.4/7 dB gain at 77/79 GHz, and the VCO oscillates from 79 to 82 GHz before it is tuned by cutting the transmission line ladder, and it centres around 77 GHz with a tuning range of 3.8 GHz for the whole ambient temperature variation range from -40degC to +125degC after we cut the lines by tungsten-carbide needles. Phase noise is -90 dBc/Hz@l MHz offset. Differential output power delivered by the VCO is 5 dBm, which is an optimum level to drive the mixer. The receiver occupies 0.5 mm 2 without pads and 1.26 mm 2 with pads, and consumes 595 mW. The measurement of the whole receiver at 79 GHz shows 20-26 dB gain in the linear region with stable IF output signal. The input P 1dB of the receiver is -35 dBm.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2008.2003994</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>77/79 GHz ; Amplifiers ; Applied sciences ; Automotive engineering ; Automotive radar ; Circuit properties ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; flip-chip ; FMCW ; Gain ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Integrated circuits ; LNA ; micro mixer ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwave integrated circuits ; MMIC ; MMICs ; Monolithic integrated circuits ; Radar ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SiGe ; Silicon germanium ; Transistors ; VCO ; Voltage-controlled oscillators</subject><ispartof>IEEE journal of solid-state circuits, 2008-09, Vol.43 (9), p.1897-1908</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-9f034e58ad68a756e3b840030a7f4f3bc8a2221a1ad8ec135b208812f32507c73</citedby><cites>FETCH-LOGICAL-c385t-9f034e58ad68a756e3b840030a7f4f3bc8a2221a1ad8ec135b208812f32507c73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4625989$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,777,781,786,787,23911,23912,25121,27905,27906,54777</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20667760$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Li Wang</creatorcontrib><creatorcontrib>Glisic, S.</creatorcontrib><creatorcontrib>Borngraeber, J.</creatorcontrib><creatorcontrib>Winkler, W.</creatorcontrib><creatorcontrib>Scheytt, J.C.</creatorcontrib><title>A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive Radar</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A single-ended 77/79 GHz monolithic microwave integrated circuit (MMIC) receiver has been developed in SiGe HBT technology for frequency-modulated continuous-wave (FMCW) automotive radars. The single-ended receiver chip consists of the first reported SiGe 77/79 GHz single-ended cascode low noise amplifier (LNA), the improved single-ended RF double-balanced down-conversion 77/79 GHz micromixer, and the modified differential Colpitts 77/79 GHz voltage controlled oscillator (VCO). The LNA presents 20/21.7 dB gain and mixer has 13.4/7 dB gain at 77/79 GHz, and the VCO oscillates from 79 to 82 GHz before it is tuned by cutting the transmission line ladder, and it centres around 77 GHz with a tuning range of 3.8 GHz for the whole ambient temperature variation range from -40degC to +125degC after we cut the lines by tungsten-carbide needles. Phase noise is -90 dBc/Hz@l MHz offset. Differential output power delivered by the VCO is 5 dBm, which is an optimum level to drive the mixer. The receiver occupies 0.5 mm 2 without pads and 1.26 mm 2 with pads, and consumes 595 mW. The measurement of the whole receiver at 79 GHz shows 20-26 dB gain in the linear region with stable IF output signal. The input P 1dB of the receiver is -35 dBm.</description><subject>77/79 GHz</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Automotive engineering</subject><subject>Automotive radar</subject><subject>Circuit properties</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>flip-chip</subject><subject>FMCW</subject><subject>Gain</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Integrated circuits</subject><subject>LNA</subject><subject>micro mixer</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwave integrated circuits</subject><subject>MMIC</subject><subject>MMICs</subject><subject>Monolithic integrated circuits</subject><subject>Radar</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SiGe</subject><subject>Silicon germanium</subject><subject>Transistors</subject><subject>VCO</subject><subject>Voltage-controlled oscillators</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kU1Lw0AQhhdRsH78APGyCOopdr-yH8dS2qoUBKvgbdluJhJJE91NBP31bmjx4MHLDDPzzMsML0JnlNxQSsz4frWa3jBC9BC4MWIPjWie64wq_rKPRoRQnZk0O0RHMb6lUghNR2g5wauqea0hmzUFFHje1_UXvms6eA2uS41VtQCs1FgZvLj9xo_gofqEgMs24EnftZu2SzV-dIULJ-igdHWE010-Rs_z2dP0Nls-LO6mk2Xmuc67zJSEC8i1K6R2KpfA11qkq4lTpSj52mvHGKOOukKDpzxfM6I1ZSVnOVFe8WN0vdV9D-1HD7Gzmyp6qGvXQNtHawiXQnIzkFf_klwIKQ1jCbz4A761fWjSF9ZQxoRhSiSIbiEf2hgDlPY9VBsXviwldrDBDjbYwQa7syHtXO6EXfSuLoNrfBV_FxmRUilJEne-5SoA-B0LyXKjDf8BZXWMjA</recordid><startdate>20080901</startdate><enddate>20080901</enddate><creator>Li Wang</creator><creator>Glisic, S.</creator><creator>Borngraeber, J.</creator><creator>Winkler, W.</creator><creator>Scheytt, J.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20080901</creationdate><title>A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive Radar</title><author>Li Wang ; Glisic, S. ; Borngraeber, J. ; Winkler, W. ; Scheytt, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-9f034e58ad68a756e3b840030a7f4f3bc8a2221a1ad8ec135b208812f32507c73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>77/79 GHz</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Automotive engineering</topic><topic>Automotive radar</topic><topic>Circuit properties</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>flip-chip</topic><topic>FMCW</topic><topic>Gain</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Integrated circuits</topic><topic>LNA</topic><topic>micro mixer</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwave integrated circuits</topic><topic>MMIC</topic><topic>MMICs</topic><topic>Monolithic integrated circuits</topic><topic>Radar</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SiGe</topic><topic>Silicon germanium</topic><topic>Transistors</topic><topic>VCO</topic><topic>Voltage-controlled oscillators</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li Wang</creatorcontrib><creatorcontrib>Glisic, S.</creatorcontrib><creatorcontrib>Borngraeber, J.</creatorcontrib><creatorcontrib>Winkler, W.</creatorcontrib><creatorcontrib>Scheytt, J.C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li Wang</au><au>Glisic, S.</au><au>Borngraeber, J.</au><au>Winkler, W.</au><au>Scheytt, J.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive Radar</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2008-09-01</date><risdate>2008</risdate><volume>43</volume><issue>9</issue><spage>1897</spage><epage>1908</epage><pages>1897-1908</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A single-ended 77/79 GHz monolithic microwave integrated circuit (MMIC) receiver has been developed in SiGe HBT technology for frequency-modulated continuous-wave (FMCW) automotive radars. The single-ended receiver chip consists of the first reported SiGe 77/79 GHz single-ended cascode low noise amplifier (LNA), the improved single-ended RF double-balanced down-conversion 77/79 GHz micromixer, and the modified differential Colpitts 77/79 GHz voltage controlled oscillator (VCO). The LNA presents 20/21.7 dB gain and mixer has 13.4/7 dB gain at 77/79 GHz, and the VCO oscillates from 79 to 82 GHz before it is tuned by cutting the transmission line ladder, and it centres around 77 GHz with a tuning range of 3.8 GHz for the whole ambient temperature variation range from -40degC to +125degC after we cut the lines by tungsten-carbide needles. Phase noise is -90 dBc/Hz@l MHz offset. Differential output power delivered by the VCO is 5 dBm, which is an optimum level to drive the mixer. The receiver occupies 0.5 mm 2 without pads and 1.26 mm 2 with pads, and consumes 595 mW. The measurement of the whole receiver at 79 GHz shows 20-26 dB gain in the linear region with stable IF output signal. The input P 1dB of the receiver is -35 dBm.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2008.2003994</doi><tpages>12</tpages></addata></record> |
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subjects | 77/79 GHz Amplifiers Applied sciences Automotive engineering Automotive radar Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology flip-chip FMCW Gain Germanium silicon alloys Heterojunction bipolar transistors Integrated circuits LNA micro mixer Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave integrated circuits MMIC MMICs Monolithic integrated circuits Radar Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe Silicon germanium Transistors VCO Voltage-controlled oscillators |
title | A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive Radar |
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