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A 10-35 GHz Low Power Bulk-DrivenMixer Using 0.13[Formula Omitted]m CMOS Process

10-35 GHz doubly balanced mixer using a 0.13-mum CMOS foundry process is presented in this letter. Using the bulk-driven topology, the number of transistors of the doubly balanced mixer is reduced; thus the mixer can achieve a low supply voltage and low power consumption. This bulk-driven mixer exhi...

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Published in:IEEE microwave and wireless components letters 2008-07, Vol.18 (7), p.455-457
Main Authors: Chun-Lin Kuo, Chun-Lin Kuo, Bo-Jr Huang, Bo-Jr Huang, Che-Chung Kuo, Che-Chung Kuo, Kun-You Lin, Kun-You Lin, Huei Wang, Huei Wang
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container_title IEEE microwave and wireless components letters
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creator Chun-Lin Kuo, Chun-Lin Kuo
Bo-Jr Huang, Bo-Jr Huang
Che-Chung Kuo, Che-Chung Kuo
Kun-You Lin, Kun-You Lin
Huei Wang, Huei Wang
description 10-35 GHz doubly balanced mixer using a 0.13-mum CMOS foundry process is presented in this letter. Using the bulk-driven topology, the number of transistors of the doubly balanced mixer is reduced; thus the mixer can achieve a low supply voltage and low power consumption. This bulk-driven mixer exhibits a measured conversion gain of -1 plusmn 2 dB from 10 to 35 GHz of radio frequency (RF) with a fixed intermediate frequency (IF) of 100 MHz. The measured local oscillation (LO) to IF and RF-IF isolations are better than 30 dB. The chip area of the mixer is 0.6 times 0.4 mm@@u2@. The total power consumption included output buffer is only 6 mW.
doi_str_mv 10.1109/LMWC.2008.924925
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title A 10-35 GHz Low Power Bulk-DrivenMixer Using 0.13[Formula Omitted]m CMOS Process
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