A 1-V CMOS Current Reference With Temperature and Process Compensation

A 1-V current reference fabricated in a standard CMOS process is described. Temperature compensation is achieved from a bandgap reference core using a transimpedance amplifier in order to generate an intermediate voltage reference, V REF . This voltage applied to the gate of a carefully sized nMOS o...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. 1, Fundamental theory and applications Fundamental theory and applications, 2007-07, Vol.54 (7), p.1424-1429
Main Authors: Bendali, A., Audet, Y.
Format: Article
Language:English
Subjects:
Circuits
CMOS
CMOS process
Compensation
Current measurement
current reference
Drains
Electric potential
Low voltage
MOS devices
MOSFETs
Photonic band gap
process and temperature compensation
Temperature distribution
Temperature measurement
Threshold voltage
transimpedance amplifier
Voltage
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Summary:A 1-V current reference fabricated in a standard CMOS process is described. Temperature compensation is achieved from a bandgap reference core using a transimpedance amplifier in order to generate an intermediate voltage reference, V REF . This voltage applied to the gate of a carefully sized nMOS output transistor provides a reference drain current, I REF , nearly independent of temperature by mutual compensation of mobility and threshold voltage variations. The circuit topology allows for compensation of threshold voltage variation due to process parameters as well. The current reference has been fabricated in a standard 0.18-mum CMOS process. Results from nineteen samples measured over a temperature range of 0degC to 100degC , showed values of I REF of 144.3 muA plusmn 7% and V REF of 610.9 mV plusmn 2% due to the combined effect of temperature and process variations.
ISSN:1549-8328
1057-7122
1558-0806
DOI:10.1109/TCSI.2007.900176