A Wide-Dynamic-Range CMOS Image Sensor Based on Multiple Short Exposure-Time Readout With Multiple-Resolution Column-Parallel ADC

A wide-dynamic-range CMOS image sensor based on synthesis of one long and multiple short exposure-time signals is proposed. A high-speed, high-resolution column-parallel integration type analog-to-digital converter (ADC) with a nonlinear slope is crucial for this purpose. A prototype wide-dynamic-ra...

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Bibliographic Details
Published in:IEEE sensors journal 2007-01, Vol.7 (1), p.151-158
Main Authors: Sasaki, M., Mase, M., Kawahito, S., Tadokoro, Y.
Format: Article
Language:English
Subjects:
Analog-digital conversion
Cameras
CMOS
CMOS image sensor
CMOS image sensors
Dynamic range
Exposure
High speed
Image converters
multiple-exposure
multiresolution analog-to-digital converter (ADC)
Pixel
Prototypes
Sensors
Signal resolution
Signal synthesis
Synthesis
Time measurement
wide dynamic range
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Summary:A wide-dynamic-range CMOS image sensor based on synthesis of one long and multiple short exposure-time signals is proposed. A high-speed, high-resolution column-parallel integration type analog-to-digital converter (ADC) with a nonlinear slope is crucial for this purpose. A prototype wide-dynamic-range CMOS image sensor that captures one long and three short exposure-time signals has been developed using 0.25-mum 1-poly 4-metal CMOS image sensor technology. The dynamic range of the prototype sensor is expanded by a factor of 121.5, compared with the case of a single long exposure time. The maximum DNL of the ADC is 0.3 least significant bits (LSB) for the single-resolution mode and 0.7 LSB for the multiresolution mode
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2006.888058