Gamma-Ray Irradiation-Enhanced Wet-Etching of Proton-Exchanged Lithium Niobate

Gamma-ray irradiation-enhanced wet-etching of proton-exchanged Z-cut Y-propagating LiNbO 3 is presented. The etched ridge height of a sample with gamma-ray irradiation of intensity 650 krad/h on a LiNbO 3 substrate for 30 min is three times larger than that without. Moreover, experimental results sh...

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Bibliographic Details
Published in:IEEE photonics technology letters 2008-05, Vol.20 (9), p.682-684
Main Authors: Lai, Cheng-Chih, Chang, Chin-Yu, Wei, Yuan-Yaw, Wang, Way-Seen
Format: Article
Language:English
Subjects:
Dry etching
Etching
Gamma-ray irradiation
Irradiation
Lithium niobate
Lithium niobates
Optical devices
Optical materials
Optical modulation
Optical sensors
Optical waveguides
Optoelectronic and photonic sensors
Photonics
proton exchange (PE)
Protons
Ridges
Sputter etching
Titanium
Wave propagation
waveguide
wet etching
Yttrium
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Summary:Gamma-ray irradiation-enhanced wet-etching of proton-exchanged Z-cut Y-propagating LiNbO 3 is presented. The etched ridge height of a sample with gamma-ray irradiation of intensity 650 krad/h on a LiNbO 3 substrate for 30 min is three times larger than that without. Moreover, experimental results show the propagation loss values of Ti-indiffused LiNbO 3 waveguides fabricated on the irradiated ridge structures are only slightly larger than those on the nonirradiated ones.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.919450