Accurate electron mobility extraction in nMOSFETs by RF split CV

In this paper, an accurate capacitance extraction method, based on high frequency measurements (100 MHz–1 GHz), is used to study the carrier mobility in conventional nMOSFETs and metal/high- k gate stacked nMOSFETs. Simulations have been made to extract the main physical parameters. Effective carrie...

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Bibliographic Details
Published in:Microelectronic engineering 2009-07, Vol.86 (7), p.1665-1667
Main Authors: Hyvert, G., Calmon, F., Nguyen, T., Poncet, A., Plossu, C.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance measurement
Electron mobility
Electronics
Exact sciences and technology
Hafnium oxide
MOSFET
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:In this paper, an accurate capacitance extraction method, based on high frequency measurements (100 MHz–1 GHz), is used to study the carrier mobility in conventional nMOSFETs and metal/high- k gate stacked nMOSFETs. Simulations have been made to extract the main physical parameters. Effective carrier mobility is extracted, using a split CV methodology and a comparison is drawn between RF (radio frequency) and LF (low frequency) measurements for RF dedicated devices. Several problems encountered during high frequency measurements are also discussed. Finally, a method for using RF split CV with any kind of devices is proposed.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.021