A 71-80 GHz Amplifier Using 0.13- [mu]m CMOS Technology

A 71-80 GHz amplifier using 0.13-mum standard mixed signal/radio frequency complementary metal-oxide- semiconductor (CMOS) technology is presented in this letter. This four-stage cascade thin-film microstrip amplifier achieves the peak gain of 7.0 dB at 75 GHz. The 3-dB frequency bandwidth range is...

Full description

Saved in:
Bibliographic Details
Published in:IEEE microwave and wireless components letters 2007-09, Vol.17 (9), p.685-687
Main Authors: To-Po Wang, To-Po Wang, Huei Wang, Huei Wang
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A 71-80 GHz amplifier using 0.13-mum standard mixed signal/radio frequency complementary metal-oxide- semiconductor (CMOS) technology is presented in this letter. This four-stage cascade thin-film microstrip amplifier achieves the peak gain of 7.0 dB at 75 GHz. The 3-dB frequency bandwidth range is from 71 to 80 GHz. The amplifier demonstrates the highest amplification frequency and smallest chip size among previous published millimeter-wave (MMW) 0.13-mum CMOS amplifiers.
ISSN:2771-957X
1531-1309
2771-9588
DOI:10.1109/LMWC.2007.903463