Electron beam induced deposited etch masks

In this paper we present a method based on electron beam induced deposition (EBID) to fabricate small electrodes with sub-10 nm gaps as required e.g. in single electron devices. EBID provides nanometer resolution combined with a relatively high throughput and reproducibility. Some known drawbacks of...

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Bibliographic Details
Published in:Microelectronic engineering 2009-04, Vol.86 (4), p.961-964
Main Authors: Heerkens, C.Th.H., Kamerbeek, M.J., van Dorp, W.F., Hagen, C.W., Hoekstra, J.
Format: Article
Language:English
Subjects:
Applied sciences
EBID
Electronics
Etch mask
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Molecular electronics, nanoelectronics
RIE
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:In this paper we present a method based on electron beam induced deposition (EBID) to fabricate small electrodes with sub-10 nm gaps as required e.g. in single electron devices. EBID provides nanometer resolution combined with a relatively high throughput and reproducibility. Some known drawbacks of EBID are the limited choice of materials, inclusion of large amounts of carbon and low aspect ratio (AR) in the sub-10 nm regime. These drawbacks have been circumvented by using EBID deposits as an etch mask to pattern other materials, rather than using EBID to deposit the electrodes directly. Using this method 15–20 nm wide electrodes separated by a 7 nm gap were successfully fabricated.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2008.11.079