High Self-Resonant and Area Efficient Monolithic Transformer Using Novel Intercoil-Crossing Structure for Silicon RFIC

• Published in: IEEE electron device letters 2008-12, Vol.29 (12), p.1376-1379
• Main Authors: Chee-Chong Lim, Kiat-Seng Yeo, Kok-Wai Chew, Jiang-Min Gu, Alper, C., Suh-Fei Lim, Chirn Chye Boon, Ping Qiu, Manh Anh Do, Lap Chan
• Format: Article
• Language: English
• Subjects: Applied sciences; CMOS; CMOS process; CMOS technology; Coiling; Coils; Compatibility; Design. Technologies. Operation analysis. Testing; Devices; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Foundries; Frequency; inductance; inductors; Integrated circuits; Magnetic devices; Metallization; Microelectronic fabrication (materials and surfaces technology); modeling; Radiofrequency integrated circuits; Semiconductor device manufacture; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Silicon; Transformers; Transmission lines
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2008.2006765

Novel on-chip multiport symmetrical transformer that has high self-resonant frequency and good area efficiency is presented. This technique involves the unique way of intercrossing the transformer's primary and secondary coil using multiple metallization layers. A stacked transformer, with the same area utilization as the proposed device, is selected for performance comparison. The proposed design has demonstrated a higher self-resonant frequency in differential transmission line transformer configuration, i.e., f d - SRF(Stacked) = 8 GHz and f d - SRF(Sym) = 10.35 GHz. The structure presented is fully compatible with standard CMOS foundry processes. The silicon data reported in this letter are based on Chartered Semiconductor Manufacturing's 0.13- mu m RFCMOS technology node.