Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al@@d2@O@@d3@ layers for memory applications

Structural and electrical properties of ALD-grown 5 and 7 nm-thick Al@@d2@O@@d3@ layers before and after implantation of Ge ions (1 keV, 0.5-1 x 10@@u16@ cm@@u-2@) and thermal annealing at temperatures in the 700- 1050 'C range are reported. Transmission Electron Microscopy reveals the developm...

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Bibliographic Details
Published in:Microelectronic engineering 2009-09, Vol.86 (7-9), p.1838-1841
Main Authors: Dimitrakis, P, Mouti, A, Bonafos, C, Schamm, S, Assayag, G Ben, Ioannou-Sougleridis, V, Schmidt, B, Becker, J, Normand, P
Format: Article
Language:English
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Summary:Structural and electrical properties of ALD-grown 5 and 7 nm-thick Al@@d2@O@@d3@ layers before and after implantation of Ge ions (1 keV, 0.5-1 x 10@@u16@ cm@@u-2@) and thermal annealing at temperatures in the 700- 1050 'C range are reported. Transmission Electron Microscopy reveals the development of a 1 nm-thick SiO@@d2@-rich layer at the Al@@d2@O@@d3@/Si substrate interface as well as the formation of Ge nanocrystals with a mean diameter of [not, vert, similar]5 nm inside the implanted Al@@d2@O@@d3@ layers after annealing at 800 'C for 20 min. Electrical measurements performed on metal-insulator-semiconductor capacitors using Ge-implanted and annealed Al@@d2@O@@d3@ layers reveal charge storage at low-electric fields mainly due to location of the Ge nanocrystals at a tunnelling distance from the substrate and their spatial dispersion inside the Al@@d2@O@@d3@ layers.
ISSN:0167-9317
DOI:10.1016/j.mee.2009.03.074