Electrooptical Modulator at Telecommunication Wavelengths Based on GaN-AlN Coupled Quantum Wells

We report on the demonstration of an intersubband (ISB) coupled quantum-well modulator operating at room temperature and telecommunication wavelength using a GaN-AIN quantum-well structure. The optical modulation is shown to result from electron tunneling between the wells. Stark shifting of the ISB...

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Bibliographic Details
Published in:IEEE photonics technology letters 2008-05, Vol.20 (9), p.724-726
Main Authors: Kheirodin, N., Nevou, L., Machhadani, H., Crozat, P., Vivien, L., Tchernycheva, M., Lupu, A., Julien, F.H., Pozzovivo, G., Golka, S., Strasser, G., Guillot, F., Monroy, E.
Format: Article
Language:English
Subjects:
Absorption
Bandwidth
Chirp modulation
Electrons
Electrooptic modulation
Electrooptic modulators
infrared spectroscopy
intersubband (ISB) transition
nitrogen compounds
Optical modulation
Optoelectronic devices
Plasma temperature
Quantum well devices
quantum-well (QW) devices
Tunneling
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Summary:We report on the demonstration of an intersubband (ISB) coupled quantum-well modulator operating at room temperature and telecommunication wavelength using a GaN-AIN quantum-well structure. The optical modulation is shown to result from electron tunneling between the wells. Stark shifting of the ISB absorption is observed. The maximum modulation depth is 0.79% at lambda= 2.3 mum and 0.18% at lambda= 1.37 mum for a mesa device with only 151-nm interaction length. We show that by reducing the mesa size down to 15 times 15 mum 2 , optical modulation bandwidth as large as 3 GHz can be obtained.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.919595