Fabrication and Characterization of Fully Epitaxial Magnetic Tunnel Junction Field Sensors Using a Thin Film

Fully epitaxial magnetic tunnel junctions (MTJs) consisting of a Co 2 MnSi (CMS) upper free layer, a MgO tunnel barrier, and a Co 50 Fe 50 lower pinned layer were fabricated for sensor application. The fabricated MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics wit...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2008-11, Vol.44 (11), p.3996-3998
Main Authors: Masuda, M., Uemura, T., Matsuda, K.-i., Yamamoto, M.
Format: Article
Language:English
Subjects:
Co-based full-Heusler alloy
Collision mitigation
Fabrication
field sensor
Gas detectors
Image sensors
Iron
Magnetic sensors
magnetic tunnel junction
Magnetic tunneling
Magnetism
Magnetization
Sensor phenomena and characterization
tunnel magneto resistance
Tunneling magnetoresistance
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Summary:Fully epitaxial magnetic tunnel junctions (MTJs) consisting of a Co 2 MnSi (CMS) upper free layer, a MgO tunnel barrier, and a Co 50 Fe 50 lower pinned layer were fabricated for sensor application. The fabricated MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics with a relatively high TMR ratios of 94% at room temperature (209% at 4.2 K) with V half of approximately - 0.52 and + 0.54 V. Almost hysteresis-free TMR characteristics with sensitivity of approximately 0.4%/Oe were obtained with a cross magnetization configuration, in which the magnetization of the CMS free layer was oriented perpendicularly to that of the pinned layer.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2008.2003540