High-Speed InGaP/GaAs p-i-n Photodiodes With Wide Spectral Range

By selectively removing the GaAs cap layer on top of the InGaP/GaAs p-i-n photodiodes, a photodiode with high quantum efficiency in the 300-850-nm spectral range was realized. With antireflection coating designed for 850 nm, a quantum efficiency that is higher than 90% in the 420-850-nm range and hi...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2007-09, Vol.28 (9), p.797-799
Main Authors: WU, Meng-Chyi, HUANG, Yun-Hsun, HO, Chong-Long
Format: Article
Language:English
Subjects:
Absorption
Applied sciences
Bandwidth
Coatings
Dark current
Devices
Electronics
Etching
Exact sciences and technology
GaAs
Gallium arsenide
Gallium arsenides
High speed
Optical fiber communication
Optoelectronic devices
p-i-n photodiode
Photodetectors
Photodiodes
PIN photodiodes
Quantum efficiency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spectra
Vertical cavity surface emitting lasers
Wavelengths
wide spectral range
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:By selectively removing the GaAs cap layer on top of the InGaP/GaAs p-i-n photodiodes, a photodiode with high quantum efficiency in the 300-850-nm spectral range was realized. With antireflection coating designed for 850 nm, a quantum efficiency that is higher than 90% in the 420-850-nm range and higher than 70% in the 360-870-nm range was achieved. In addition, the photodiode, exhibiting a dark current smaller than several picoampere, has a 3-dB bandwidth higher than 9.7 GHz at the 850-nm wavelength. Since both high-efficiency and high-speed operation can be achieved, receivers based on such devices are suitable for both the 850- and 650-nm fiber communication systems.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.902609