High Gain x Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes

This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiN@@dx@ antireflection coating. The combined properties of very low dark current (@@iI@ @@ddark@(@@iM@ = 0) = 17 nA), low e...

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Bibliographic Details
Published in:IEEE photonics technology letters 2008-03, Vol.20 (6), p.455-457
Main Authors: Rouvie, A, Carpentier, D, Lagay, N, Decobert, J, Pommereau, F, Achouche, M
Format: Article
Language:English
Online Access:Get full text
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Summary:This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiN@@dx@ antireflection coating. The combined properties of very low dark current (@@iI@ @@ddark@(@@iM@ = 0) = 17 nA), low excess noise factor (f(M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mum.
ISSN:1041-1135
DOI:10.1109/LPT.2008.918229