High Gain x Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes

This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiN@@dx@ antireflection coating. The combined properties of very low dark current (@@iI@ @@ddark@(@@iM@ = 0) = 17 nA), low e...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 2008-03, Vol.20 (6), p.455-457
Main Authors: Rouvie, A, Carpentier, D, Lagay, N, Decobert, J, Pommereau, F, Achouche, M
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 457
container_issue 6
container_start_page 455
container_title IEEE photonics technology letters
container_volume 20
creator Rouvie, A
Carpentier, D
Lagay, N
Decobert, J
Pommereau, F
Achouche, M
description This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiN@@dx@ antireflection coating. The combined properties of very low dark current (@@iI@ @@ddark@(@@iM@ = 0) = 17 nA), low excess noise factor (f(M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mum.
doi_str_mv 10.1109/LPT.2008.918229
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_34496598</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34496598</sourcerecordid><originalsourceid>FETCH-LOGICAL-p116t-9ba9de3b6b4d2ee3bc54ccf2d789659c2ce6d8fa39d40c96711ea2120d3dbb0c3</originalsourceid><addsrcrecordid>eNotjjFPwzAYBT2ARCnMrJ7YUvzZThqPoYKkKFIzFDFWju0Qo2CX2CmIX08QTO-kk04PoRsgKwAi7upmv6KE5CsBOaXiDC2AcEgAWHqBLkN4IwR4yvgCvVT2tceltA5_4Xvp9KfVscfN6PWkIt6dzIiBk6SsvnEzSCdH_DQ5Fa13uBi2rgi4OMlZqN7gpvfRa-u1CVfovJNDMNf_u0TPjw_7TZXUu3K7KerkCJDFRLRSaMParOWamhlUypXqqF7nIkuFospkOu8kE5oTJbI1gJEUKNFMty1RbIlu_7rH0X9MJsTDuw3KDPMj46dwYJz_hnL2A9xBUpA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34496598</pqid></control><display><type>article</type><title>High Gain x Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Rouvie, A ; Carpentier, D ; Lagay, N ; Decobert, J ; Pommereau, F ; Achouche, M</creator><creatorcontrib>Rouvie, A ; Carpentier, D ; Lagay, N ; Decobert, J ; Pommereau, F ; Achouche, M</creatorcontrib><description>This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiN@@dx@ antireflection coating. The combined properties of very low dark current (@@iI@ @@ddark@(@@iM@ = 0) = 17 nA), low excess noise factor (f(M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mum.</description><identifier>ISSN: 1041-1135</identifier><identifier>DOI: 10.1109/LPT.2008.918229</identifier><language>eng</language><ispartof>IEEE photonics technology letters, 2008-03, Vol.20 (6), p.455-457</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Rouvie, A</creatorcontrib><creatorcontrib>Carpentier, D</creatorcontrib><creatorcontrib>Lagay, N</creatorcontrib><creatorcontrib>Decobert, J</creatorcontrib><creatorcontrib>Pommereau, F</creatorcontrib><creatorcontrib>Achouche, M</creatorcontrib><title>High Gain x Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes</title><title>IEEE photonics technology letters</title><description>This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiN@@dx@ antireflection coating. The combined properties of very low dark current (@@iI@ @@ddark@(@@iM@ = 0) = 17 nA), low excess noise factor (f(M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mum.</description><issn>1041-1135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotjjFPwzAYBT2ARCnMrJ7YUvzZThqPoYKkKFIzFDFWju0Qo2CX2CmIX08QTO-kk04PoRsgKwAi7upmv6KE5CsBOaXiDC2AcEgAWHqBLkN4IwR4yvgCvVT2tceltA5_4Xvp9KfVscfN6PWkIt6dzIiBk6SsvnEzSCdH_DQ5Fa13uBi2rgi4OMlZqN7gpvfRa-u1CVfovJNDMNf_u0TPjw_7TZXUu3K7KerkCJDFRLRSaMParOWamhlUypXqqF7nIkuFospkOu8kE5oTJbI1gJEUKNFMty1RbIlu_7rH0X9MJsTDuw3KDPMj46dwYJz_hnL2A9xBUpA</recordid><startdate>20080315</startdate><enddate>20080315</enddate><creator>Rouvie, A</creator><creator>Carpentier, D</creator><creator>Lagay, N</creator><creator>Decobert, J</creator><creator>Pommereau, F</creator><creator>Achouche, M</creator><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20080315</creationdate><title>High Gain x Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes</title><author>Rouvie, A ; Carpentier, D ; Lagay, N ; Decobert, J ; Pommereau, F ; Achouche, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p116t-9ba9de3b6b4d2ee3bc54ccf2d789659c2ce6d8fa39d40c96711ea2120d3dbb0c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Rouvie, A</creatorcontrib><creatorcontrib>Carpentier, D</creatorcontrib><creatorcontrib>Lagay, N</creatorcontrib><creatorcontrib>Decobert, J</creatorcontrib><creatorcontrib>Pommereau, F</creatorcontrib><creatorcontrib>Achouche, M</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rouvie, A</au><au>Carpentier, D</au><au>Lagay, N</au><au>Decobert, J</au><au>Pommereau, F</au><au>Achouche, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Gain x Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes</atitle><jtitle>IEEE photonics technology letters</jtitle><date>2008-03-15</date><risdate>2008</risdate><volume>20</volume><issue>6</issue><spage>455</spage><epage>457</epage><pages>455-457</pages><issn>1041-1135</issn><abstract>This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiN@@dx@ antireflection coating. The combined properties of very low dark current (@@iI@ @@ddark@(@@iM@ = 0) = 17 nA), low excess noise factor (f(M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mum.</abstract><doi>10.1109/LPT.2008.918229</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1041-1135
ispartof IEEE photonics technology letters, 2008-03, Vol.20 (6), p.455-457
issn 1041-1135
language eng
recordid cdi_proquest_miscellaneous_34496598
source IEEE Electronic Library (IEL) Journals
title High Gain x Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T18%3A50%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20Gain%20x%20Bandwidth%20Product%20Over%20140-GHz%20Planar%20Junction%20AlInAs%20Avalanche%20Photodiodes&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Rouvie,%20A&rft.date=2008-03-15&rft.volume=20&rft.issue=6&rft.spage=455&rft.epage=457&rft.pages=455-457&rft.issn=1041-1135&rft_id=info:doi/10.1109/LPT.2008.918229&rft_dat=%3Cproquest%3E34496598%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p116t-9ba9de3b6b4d2ee3bc54ccf2d789659c2ce6d8fa39d40c96711ea2120d3dbb0c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=34496598&rft_id=info:pmid/&rfr_iscdi=true