Dynamic Resistance-A Metric for Variability Characterization of Phase-Change Memory

The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, R d ) is found to be inversely proportional to the amplitude of the programming current, as R d = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory...

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Bibliographic Details
Published in:IEEE electron device letters 2009-02, Vol.30 (2), p.126-129
Main Authors: Rajendran, B., Breitwisch, M., Ming-Hsiu Lee, Burr, G.W., Yen-Hao Shih, Cheek, R., Schrott, A., Chieh-Fang Chen, Joseph, E., Dasaka, R., Lung, H.-L., Chung Lam
Format: Article
Language:English
Subjects:
Applied sciences
Chalcogenide
Conductivity
Current measurement
Design. Technologies. Operation analysis. Testing
Dynamic programming
Electrical resistance measurement
Electronics
Electrothermal effects
electrothermal simulations
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Lungs
Magnetic and optical mass memories
nonvolatile memory
Phase change materials
Phase change memory
Phase measurement
phase-change memory (PCM)
Resists
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
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Summary:The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, R d ) is found to be inversely proportional to the amplitude of the programming current, as R d = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2010004