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Dynamic Resistance-A Metric for Variability Characterization of Phase-Change Memory

The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, R d ) is found to be inversely proportional to the amplitude of the programming current, as R d = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory...

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Published in:	IEEE electron device letters 2009-02, Vol.30 (2), p.126-129
Main Authors:	Rajendran, B., Breitwisch, M., Ming-Hsiu Lee, Burr, G.W., Yen-Hao Shih, Cheek, R., Schrott, A., Chieh-Fang Chen, Joseph, E., Dasaka, R., Lung, H.-L., Chung Lam
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Language:	English
Subjects:	Applied sciences Chalcogenide Conductivity Current measurement Design. Technologies. Operation analysis. Testing Dynamic programming Electrical resistance measurement Electronics Electrothermal effects electrothermal simulations Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Lungs Magnetic and optical mass memories nonvolatile memory Phase change materials Phase change memory Phase measurement phase-change memory (PCM) Resists Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information
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container_end_page	129
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container_title	IEEE electron device letters
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creator	Rajendran, B. Breitwisch, M. Ming-Hsiu Lee Burr, G.W. Yen-Hao Shih Cheek, R. Schrott, A. Chieh-Fang Chen Joseph, E. Dasaka, R. Lung, H.-L. Chung Lam
description	The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, R d ) is found to be inversely proportional to the amplitude of the programming current, as R d = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.
doi_str_mv	10.1109/LED.2008.2010004
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subjects	Applied sciences Chalcogenide Conductivity Current measurement Design. Technologies. Operation analysis. Testing Dynamic programming Electrical resistance measurement Electronics Electrothermal effects electrothermal simulations Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Lungs Magnetic and optical mass memories nonvolatile memory Phase change materials Phase change memory Phase measurement phase-change memory (PCM) Resists Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information
title	Dynamic Resistance-A Metric for Variability Characterization of Phase-Change Memory
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