High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function Ir@@d3@Si Gate

We report a novel 1000 degC stable HfLaON p-MOSFET with Ir@@d3 @Si gate. Low leakage current of 1.8times10@@u-5@ A/cm@@u2@ at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm@@u2@/Vmiddots are simultaneously obtained at 1.6 nm equivalent oxide thicknes...

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Published in:IEEE electron device letters 2007-04, Vol.28 (4), p.292-294
Main Authors: Wu, C H, Hung, B F, Chin, A, Wang, S J, Wang, X P, Li, M.-F., Zhu, C, Yen, F Y, Hou, Y T, Jin, Y, Tao, H J, Chen, S C, Liang, M S
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container_issue 4
container_start_page 292
container_title IEEE electron device letters
container_volume 28
creator Wu, C H
Hung, B F
Chin, A
Wang, S J
Wang, X P
Li, M.-F.
Zhu, C
Yen, F Y
Hou, Y T
Jin, Y
Tao, H J
Chen, S C
Liang, M S
description We report a novel 1000 degC stable HfLaON p-MOSFET with Ir@@d3 @Si gate. Low leakage current of 1.8times10@@u-5@ A/cm@@u2@ at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm@@u2@/Vmiddots are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate- first p-MOSFET process with self-aligned ion implant and 1000 degC rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.
doi_str_mv 10.1109/LED.2007.892367
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title High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function Ir@@d3@Si Gate
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