Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits

This paper evaluates the radiation responses of 2.5 V I/O transistors and regular-threshold MOSFETs from a 90 nm commercial bulk CMOS technology. The data obtained from Co ionizing radiation experiments indicate enhanced TID susceptibility in I/O devices and circuits, which is attributed to the p-ty...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2007-12, Vol.54 (6), p.2210-2217
Main Authors: McLain, M., Barnaby, H.J., Holbert, K.E., Schrimpf, R.D., Shah, H., Amort, A., Baze, M., Wert, J.
Format: Article
Language:English
Subjects:
Analytical models
Circuits
CMOS
CMOS technology
Construction
Devices
Doping
Electrostatics
Equations
I/O transistors
Ionizing radiation
Mathematical analysis
MOSFETs
off-state leakage
oxide trapped charge
Oxides
p-type body doping
regular-threshold
Semiconductor device modeling
Semiconductor process modeling
total ionizing dose
Transistors
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Summary:This paper evaluates the radiation responses of 2.5 V I/O transistors and regular-threshold MOSFETs from a 90 nm commercial bulk CMOS technology. The data obtained from Co ionizing radiation experiments indicate enhanced TID susceptibility in I/O devices and circuits, which is attributed to the p-type body doping. A quantitative model is used to analyze the effects of doping and oxide trapped charge buildup along the sidewall of the shallow trench isolation oxide. These effects are captured in the general electrostatic equation for surface potential, which can be correlated to off-state leakage current. Device simulations are used in concert with experimental measurements and the analytical model to provide physical insight into the radiation response of each device type.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2007.908461