Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy

Free-standing GaN films prepared with hydride vapor-phase epitaxy (HVPE) technique usually show bowing resulting from the high densities of defects near the N-polar face after separation from the original substrates. To solve the problem, a simple technique has been developed. A GaN layer was regrow...

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Bibliographic Details
Published in:Journal of crystal growth 2009-05, Vol.311 (10), p.3037-3039
Main Authors: Chen, Kuei-Ming, Huang, Hsin-Hsiung, Kuo, Yi-Lin, Wu, Pei-Lun, Chu, Ting-Li, Yu, Hung-Wei, Lee, Wei-I
Format: Article
Language:English
Subjects:
A1. Free-standing GaN
A3. HVPE
B1. Nitrides
B2. GaN
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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Summary:Free-standing GaN films prepared with hydride vapor-phase epitaxy (HVPE) technique usually show bowing resulting from the high densities of defects near the N-polar face after separation from the original substrates. To solve the problem, a simple technique has been developed. A GaN layer was regrown on the N-polar face of the free-standing GaN by HVPE. High-resolution X-ray diffraction (HRXRD) measurements were performed to compare the bowings among GaN films before laser lift-off (LLO), after LLO, and after regrowth. The apparent reductions of XRD full-width at half-maximum (FWHM), along with the increase of XRD peak intensity, after regrowth clearly demonstrate the effectiveness of this method to eliminate bowings of the free-standing GaN films.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2009.01.073