A Fully Integrated 5 GHz Low-Voltage LNA Using Forward Body Bias Technology

A fully integrated 5 GHz low-voltage and low-power low noise amplifier (LNA) using forward body bias technology, implemented through a 0.18 mum RF CMOS technology, is demonstrated. By employing the current-reused and forward body bias technique, the proposed LNA can operate at a reduced supply volta...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2009-03, Vol.19 (3), p.176-178
Main Authors: CHANG, Chieh-Pin, CHEN, Ja-Hao, WANG, Yeong-Her
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Bias
Circuit properties
Circuit topology
CMOS
CMOS technology
Degradation
Design. Technologies. Operation analysis. Testing
Electric potential
Electric, optical and optoelectronic circuits
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Energy consumption
Exact sciences and technology
Figure of merit
forward body bias
Forward contracts
Integrated circuits
Low noise
low noise amplifier (LNA)
Low voltage
Low-noise amplifiers
Microwaves
Noise levels
Performance gain
Power consumption
Power supplies
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Voltage
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Summary:A fully integrated 5 GHz low-voltage and low-power low noise amplifier (LNA) using forward body bias technology, implemented through a 0.18 mum RF CMOS technology, is demonstrated. By employing the current-reused and forward body bias technique, the proposed LNA can operate at a reduced supply voltage and power consumption. The proposed LNA delivers a power gain (S21) of 10.23 dB with a noise figure of 4.1 dB at 5 GHz, while consuming only 0.8 mW dc power with a low supply voltage of 0.6 V. The power consumption figure of merit (FOM 1 ) and the tuning-range figure of merit (FOM 2 ) are optimal at 12.79 dB/mW and 2.6 mW -1 , respectively. The chip area is 0.89times0.89 mm 2 .
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2009.2013745