Epitaxial growth of ferromagnetic d-phase manganese gallium on semiconducting scandium nitride (0 0 1)

Ferromagnetic d-phase manganese gallium layers with Mn/(Mn+Ga)=60% have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The @@iin-plane@ epitaxial relationship of manganese gallium with respect to scandium n...

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Bibliographic Details
Published in:Journal of crystal growth 2009-04, Vol.311 (8), p.2265-2268
Main Authors: Wang, Kangkang, Chinchore, Abhijit, Lin, Wenzhi, Ingram, David C, Smith, Arthur R, Hauser, Adam J, Yang, Fengyuan
Format: Article
Language:English
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Summary:Ferromagnetic d-phase manganese gallium layers with Mn/(Mn+Ga)=60% have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The @@iin-plane@ epitaxial relationship of manganese gallium with respect to scandium nitride is determined to be [MathML equation] and [MathML equation]. Vibrating sample magnetometry measurements indicate @@iout-of-plane@ magnetization of the film, suggesting strong magnetic anisotropy along the manganese gallium @@ic@-axis.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2009.02.033