Epitaxial growth of ferromagnetic d-phase manganese gallium on semiconducting scandium nitride (0 0 1)

Ferromagnetic d-phase manganese gallium layers with Mn/(Mn+Ga)=60% have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The @@iin-plane@ epitaxial relationship of manganese gallium with respect to scandium n...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2009-04, Vol.311 (8), p.2265-2268
Main Authors: Wang, Kangkang, Chinchore, Abhijit, Lin, Wenzhi, Ingram, David C, Smith, Arthur R, Hauser, Adam J, Yang, Fengyuan
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 2268
container_issue 8
container_start_page 2265
container_title Journal of crystal growth
container_volume 311
creator Wang, Kangkang
Chinchore, Abhijit
Lin, Wenzhi
Ingram, David C
Smith, Arthur R
Hauser, Adam J
Yang, Fengyuan
description Ferromagnetic d-phase manganese gallium layers with Mn/(Mn+Ga)=60% have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The @@iin-plane@ epitaxial relationship of manganese gallium with respect to scandium nitride is determined to be [MathML equation] and [MathML equation]. Vibrating sample magnetometry measurements indicate @@iout-of-plane@ magnetization of the film, suggesting strong magnetic anisotropy along the manganese gallium @@ic@-axis.
doi_str_mv 10.1016/j.jcrysgro.2009.02.033
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_34507826</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34507826</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_345078263</originalsourceid><addsrcrecordid>eNqNjU1OwzAQhb0oUgvtFdCsECzijp1SyhoVcYDuq5HjuI78k3ocAbcnSByA1fuk9z09Ie4VSoVqvx3kYMo3u5KlRnyVqCW27UKsELVuUO8OS3HLPCDOtsKV6I-jr_TlKcA8-qwXyD30tpQcySVbvYGuGS_EFiIlR8nO5CgEP0XICdhGb3LqJlN9csCGUvdbJV-L7yw8IiCop7W46Smw3fzlnXh4P57ePpqx5OtkuZ6jZ2NDmA_yxOd294wvB71v_y3-AIlxUQI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34507826</pqid></control><display><type>article</type><title>Epitaxial growth of ferromagnetic d-phase manganese gallium on semiconducting scandium nitride (0 0 1)</title><source>Elsevier</source><creator>Wang, Kangkang ; Chinchore, Abhijit ; Lin, Wenzhi ; Ingram, David C ; Smith, Arthur R ; Hauser, Adam J ; Yang, Fengyuan</creator><creatorcontrib>Wang, Kangkang ; Chinchore, Abhijit ; Lin, Wenzhi ; Ingram, David C ; Smith, Arthur R ; Hauser, Adam J ; Yang, Fengyuan</creatorcontrib><description>Ferromagnetic d-phase manganese gallium layers with Mn/(Mn+Ga)=60% have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The @@iin-plane@ epitaxial relationship of manganese gallium with respect to scandium nitride is determined to be [MathML equation] and [MathML equation]. Vibrating sample magnetometry measurements indicate @@iout-of-plane@ magnetization of the film, suggesting strong magnetic anisotropy along the manganese gallium @@ic@-axis.</description><identifier>ISSN: 0022-0248</identifier><identifier>DOI: 10.1016/j.jcrysgro.2009.02.033</identifier><language>eng</language><ispartof>Journal of crystal growth, 2009-04, Vol.311 (8), p.2265-2268</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Wang, Kangkang</creatorcontrib><creatorcontrib>Chinchore, Abhijit</creatorcontrib><creatorcontrib>Lin, Wenzhi</creatorcontrib><creatorcontrib>Ingram, David C</creatorcontrib><creatorcontrib>Smith, Arthur R</creatorcontrib><creatorcontrib>Hauser, Adam J</creatorcontrib><creatorcontrib>Yang, Fengyuan</creatorcontrib><title>Epitaxial growth of ferromagnetic d-phase manganese gallium on semiconducting scandium nitride (0 0 1)</title><title>Journal of crystal growth</title><description>Ferromagnetic d-phase manganese gallium layers with Mn/(Mn+Ga)=60% have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The @@iin-plane@ epitaxial relationship of manganese gallium with respect to scandium nitride is determined to be [MathML equation] and [MathML equation]. Vibrating sample magnetometry measurements indicate @@iout-of-plane@ magnetization of the film, suggesting strong magnetic anisotropy along the manganese gallium @@ic@-axis.</description><issn>0022-0248</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNjU1OwzAQhb0oUgvtFdCsECzijp1SyhoVcYDuq5HjuI78k3ocAbcnSByA1fuk9z09Ie4VSoVqvx3kYMo3u5KlRnyVqCW27UKsELVuUO8OS3HLPCDOtsKV6I-jr_TlKcA8-qwXyD30tpQcySVbvYGuGS_EFiIlR8nO5CgEP0XICdhGb3LqJlN9csCGUvdbJV-L7yw8IiCop7W46Smw3fzlnXh4P57ePpqx5OtkuZ6jZ2NDmA_yxOd294wvB71v_y3-AIlxUQI</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>Wang, Kangkang</creator><creator>Chinchore, Abhijit</creator><creator>Lin, Wenzhi</creator><creator>Ingram, David C</creator><creator>Smith, Arthur R</creator><creator>Hauser, Adam J</creator><creator>Yang, Fengyuan</creator><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20090401</creationdate><title>Epitaxial growth of ferromagnetic d-phase manganese gallium on semiconducting scandium nitride (0 0 1)</title><author>Wang, Kangkang ; Chinchore, Abhijit ; Lin, Wenzhi ; Ingram, David C ; Smith, Arthur R ; Hauser, Adam J ; Yang, Fengyuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_345078263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Kangkang</creatorcontrib><creatorcontrib>Chinchore, Abhijit</creatorcontrib><creatorcontrib>Lin, Wenzhi</creatorcontrib><creatorcontrib>Ingram, David C</creatorcontrib><creatorcontrib>Smith, Arthur R</creatorcontrib><creatorcontrib>Hauser, Adam J</creatorcontrib><creatorcontrib>Yang, Fengyuan</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Kangkang</au><au>Chinchore, Abhijit</au><au>Lin, Wenzhi</au><au>Ingram, David C</au><au>Smith, Arthur R</au><au>Hauser, Adam J</au><au>Yang, Fengyuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial growth of ferromagnetic d-phase manganese gallium on semiconducting scandium nitride (0 0 1)</atitle><jtitle>Journal of crystal growth</jtitle><date>2009-04-01</date><risdate>2009</risdate><volume>311</volume><issue>8</issue><spage>2265</spage><epage>2268</epage><pages>2265-2268</pages><issn>0022-0248</issn><abstract>Ferromagnetic d-phase manganese gallium layers with Mn/(Mn+Ga)=60% have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The @@iin-plane@ epitaxial relationship of manganese gallium with respect to scandium nitride is determined to be [MathML equation] and [MathML equation]. Vibrating sample magnetometry measurements indicate @@iout-of-plane@ magnetization of the film, suggesting strong magnetic anisotropy along the manganese gallium @@ic@-axis.</abstract><doi>10.1016/j.jcrysgro.2009.02.033</doi></addata></record>
fulltext fulltext
identifier ISSN: 0022-0248
ispartof Journal of crystal growth, 2009-04, Vol.311 (8), p.2265-2268
issn 0022-0248
language eng
recordid cdi_proquest_miscellaneous_34507826
source Elsevier
title Epitaxial growth of ferromagnetic d-phase manganese gallium on semiconducting scandium nitride (0 0 1)
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T02%3A40%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Epitaxial%20growth%20of%20ferromagnetic%20d-phase%20manganese%20gallium%20on%20semiconducting%20scandium%20nitride%20(0%200%201)&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Wang,%20Kangkang&rft.date=2009-04-01&rft.volume=311&rft.issue=8&rft.spage=2265&rft.epage=2268&rft.pages=2265-2268&rft.issn=0022-0248&rft_id=info:doi/10.1016/j.jcrysgro.2009.02.033&rft_dat=%3Cproquest%3E34507826%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_miscellaneous_345078263%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=34507826&rft_id=info:pmid/&rfr_iscdi=true