New SiC microcantilever electric connection array for single molecule electrical investigation

In this paper, we present an optimized fabrication process to obtain arrays of RF magnetron sputtered SiC microcantilevers showing a controlled and defined curvature. Thin amorphous SiC films with a rms roughness of 1.04 nm and an electrical resistivity of 502 Ω cm are obtained. By optimizing sputte...

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Bibliographic Details
Published in:Microelectronic engineering 2009-04, Vol.86 (4), p.1197-1199
Main Authors: Coutrot, A.-L., Roblin, C., Lafosse, X., David, C., Madouri, A., Laloo, R., Martrou, D.
Format: Article
Language:English
Subjects:
Applied sciences
Electronic tubes, masers
Electronics
Exact sciences and technology
Microcantilevers
RF magnetron sputtering
SiC
Stress control
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Summary:In this paper, we present an optimized fabrication process to obtain arrays of RF magnetron sputtered SiC microcantilevers showing a controlled and defined curvature. Thin amorphous SiC films with a rms roughness of 1.04 nm and an electrical resistivity of 502 Ω cm are obtained. By optimizing sputtering conditions, we have defined an in-depth stress distribution leading to an average stress value of −1.8 GPa that allows obtaining reproducible cantilevers curvature value between 10.5 and 16 μm. TMAH Si wet etching has also been optimized to define homogeneous curvature and to limit undercut problems. First electrical characterization at ambient atmosphere leads to an in-between cantilevers resistance of 100 kΩ.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.01.069