Effect of B2O3 on the Sintering Condition and Microwave Dielectric Properties of Bi4(SiO4)3 Ceramics

B2O3 was added to Bi4(SiO4)3 ceramics to aid the densification process at low temperatures (≤900°C). When the B2O3 content was

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Published in:Journal of the American Ceramic Society 2008-12, Vol.91 (12), p.4165-4167
Main Authors: Joung, Mi-Ri, Kim, Jin-Seong, Song, Myung-Eun, Paik, Dong-Su, Nahm, Sahn, Paik, Jong-Hoo, Choi, Byung-Hyun
Format: Article
Language:English
Subjects:
Applied sciences
Building materials. Ceramics. Glasses
Ceramic industries
Chemical industry and chemicals
Electrotechnical and electronic ceramics
Exact sciences and technology
Technical ceramics
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container_end_page 4167
container_issue 12
container_start_page 4165
container_title Journal of the American Ceramic Society
container_volume 91
creator Joung, Mi-Ri
Kim, Jin-Seong
Song, Myung-Eun
Paik, Dong-Su
Nahm, Sahn
Paik, Jong-Hoo
Choi, Byung-Hyun
description B2O3 was added to Bi4(SiO4)3 ceramics to aid the densification process at low temperatures (≤900°C). When the B2O3 content was
doi_str_mv 10.1111/j.1551-2916.2008.02819.x
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When the B2O3 content was &lt;3.0 mol%, a porous microstructure developed for the specimens sintered at 875°C. However, when the amount of B2O3 exceeded 3.0 mol%, the Bi4(SiO4)3 ceramics were well sintered even at 875°C for 0.5 h, due to the formation of a liquid phase containing B2O3. The microwave dielectric properties were influenced by the amount of B2O3, and the 3.0 mol% B2O3‐added Bi4(SiO4)3 ceramic sintered at 875°C for 1 h showed good microwave dielectric properties of ɛr=15.6, Q×f=36 281 GHz, and τf=−22 ppm/°C.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1551-2916.2008.02819.x</identifier><identifier>CODEN: JACTAW</identifier><language>eng</language><publisher>Malden, USA: Blackwell Publishing Inc</publisher><subject>Applied sciences ; Building materials. Ceramics. 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When the B2O3 content was &lt;3.0 mol%, a porous microstructure developed for the specimens sintered at 875°C. However, when the amount of B2O3 exceeded 3.0 mol%, the Bi4(SiO4)3 ceramics were well sintered even at 875°C for 0.5 h, due to the formation of a liquid phase containing B2O3. The microwave dielectric properties were influenced by the amount of B2O3, and the 3.0 mol% B2O3‐added Bi4(SiO4)3 ceramic sintered at 875°C for 1 h showed good microwave dielectric properties of ɛr=15.6, Q×f=36 281 GHz, and τf=−22 ppm/°C.</description><subject>Applied sciences</subject><subject>Building materials. Ceramics. 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When the B2O3 content was &lt;3.0 mol%, a porous microstructure developed for the specimens sintered at 875°C. However, when the amount of B2O3 exceeded 3.0 mol%, the Bi4(SiO4)3 ceramics were well sintered even at 875°C for 0.5 h, due to the formation of a liquid phase containing B2O3. The microwave dielectric properties were influenced by the amount of B2O3, and the 3.0 mol% B2O3‐added Bi4(SiO4)3 ceramic sintered at 875°C for 1 h showed good microwave dielectric properties of ɛr=15.6, Q×f=36 281 GHz, and τf=−22 ppm/°C.</abstract><cop>Malden, USA</cop><pub>Blackwell Publishing Inc</pub><doi>10.1111/j.1551-2916.2008.02819.x</doi><tpages>3</tpages></addata></record>
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subjects Applied sciences
Building materials. Ceramics. Glasses
Ceramic industries
Chemical industry and chemicals
Electrotechnical and electronic ceramics
Exact sciences and technology
Technical ceramics
title Effect of B2O3 on the Sintering Condition and Microwave Dielectric Properties of Bi4(SiO4)3 Ceramics
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