On the Enhanced Impact Ionization in Uniaxial Strained p-MOSFETs

This letter reports a new mechanism for the enhanced impact-ionization rate (I sub /I d ) present in short- channel uniaxial strained p-MOSFETs. Through the pinch-off voltage (V dsat ), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility,...

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Bibliographic Details
Published in:IEEE electron device letters 2007-07, Vol.28 (7), p.649-651
Main Authors: Su, Pin, Kuo, Jack J.-Y.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitive sensors
Channels
Devices
Electric fields
Electric potential
Electronics
Exact sciences and technology
Hot carrier effects
Hot-carrier effect
Impact ionization
Ionization
Lifting equipment
MOSFET circuits
Photonic band gap
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Strain
Strain control
Strain measurement
strained-silicon
substrate current
Transistors
Voltage
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Summary:This letter reports a new mechanism for the enhanced impact-ionization rate (I sub /I d ) present in short- channel uniaxial strained p-MOSFETs. Through the pinch-off voltage (V dsat ), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility, V dsat becomes lower, resulting in the observed V g -dependent enhancement in I sub /I d . This mechanism needs to be considered when one-to-one comparisons of the hot-carrier effect between strained and unstrained devices are made.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.900297