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On the Enhanced Impact Ionization in Uniaxial Strained p-MOSFETs

This letter reports a new mechanism for the enhanced impact-ionization rate (I sub /I d ) present in short- channel uniaxial strained p-MOSFETs. Through the pinch-off voltage (V dsat ), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility,...

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Published in:	IEEE electron device letters 2007-07, Vol.28 (7), p.649-651
Main Authors:	Su, Pin, Kuo, Jack J.-Y.
Format:	Article
Language:	English
Subjects:	Applied sciences Capacitive sensors Channels Devices Electric fields Electric potential Electronics Exact sciences and technology Hot carrier effects Hot-carrier effect Impact ionization Ionization Lifting equipment MOSFET circuits Photonic band gap Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Strain Strain control Strain measurement strained-silicon substrate current Transistors Voltage
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cited_by	cdi_FETCH-LOGICAL-c447t-f8f849bd135ff932cb8b961b2a491795c747e338404d0ba75ea114340e3b698c3
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container_issue	7
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container_title	IEEE electron device letters
container_volume	28
creator	Su, Pin Kuo, Jack J.-Y.
description	This letter reports a new mechanism for the enhanced impact-ionization rate (I sub /I d ) present in short- channel uniaxial strained p-MOSFETs. Through the pinch-off voltage (V dsat ), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility, V dsat becomes lower, resulting in the observed V g -dependent enhancement in I sub /I d . This mechanism needs to be considered when one-to-one comparisons of the hot-carrier effect between strained and unstrained devices are made.
doi_str_mv	10.1109/LED.2007.900297
format	article
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source	IEEE Xplore (Online service)
subjects	Applied sciences Capacitive sensors Channels Devices Electric fields Electric potential Electronics Exact sciences and technology Hot carrier effects Hot-carrier effect Impact ionization Ionization Lifting equipment MOSFET circuits Photonic band gap Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Strain Strain control Strain measurement strained-silicon substrate current Transistors Voltage
title	On the Enhanced Impact Ionization in Uniaxial Strained p-MOSFETs
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