On nanoscale Al precipitates forming in eutectic Si particles in Al–Si–Mg cast alloys

Nanoscale Al precipitates with satellite-like outgrowths have been observed in eutectic Si particles in Al–Si–Mg alloys. Investigation by high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy indicates that the outgrowth is a void in the aluminium. The void interf...

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Bibliographic Details
Published in:Scripta materialia 2009-09, Vol.61 (5), p.500-503
Main Authors: Jia, Z.H., Arnberg, L., Andersen, S.J., Walmsley, J.C.
Format: Article
Language:English
Subjects:
Aluminium precipitates
Aluminum alloy
Silicon particles
Transmission electron microscopy
Voids
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Summary:Nanoscale Al precipitates with satellite-like outgrowths have been observed in eutectic Si particles in Al–Si–Mg alloys. Investigation by high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy indicates that the outgrowth is a void in the aluminium. The void interface plane in the Al crystal is {1 1 1} and is parallel with {0 0 1} Si. It is very likely that the outgrowth is related to the precipitation of Al in the Si particles and to the stability of the Al precipitates.
ISSN:1359-6462
1872-8456
DOI:10.1016/j.scriptamat.2009.05.009