Single crystal growth and properties of the g-phase in the CuInSe@@d2@-2CdTe system

The intermediate solid solution, abbreviated as the g-phase, exists within the CuInSe@@d2@ -2CdTe system. It has a wide homogeneity range and can be considered as a continuous solid solution between the high-temperature (HT) modification of CuInSe@@d2@ and CdTe. Single crystals of the g-phase are gr...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2009-04, Vol.311 (8), p.2381-2384
Main Authors: Parasyuk, O V, Lavrynyuk, Z V, Zmiy, O F, Romanyuk, Y E
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The intermediate solid solution, abbreviated as the g-phase, exists within the CuInSe@@d2@ -2CdTe system. It has a wide homogeneity range and can be considered as a continuous solid solution between the high-temperature (HT) modification of CuInSe@@d2@ and CdTe. Single crystals of the g-phase are grown by a modified Bridgman method. Their crystal structure and electrical properties are studied. The g-phase crystals crystallize in the cubic structure of zinc blende (space group [MathML equation]) and possess intrinsic @@ip@-type conductivity with hole mobilities up to 8.29 cm@@u2@/V s.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2009.01.134