Pulsed Laser Single-Event Effects in Highly Scaled CMOS Technologies in the Presence of Dense Metal Coverage

single-photon (SPA) and two-photon laser absorption (TPA) techniques are established as reliable, effective methods to study specific single-event (SE) phenomena in advanced CMOS technologies. However, dense metal-fill in these nanoscale processes can prevent the use of top-side SPA in some cases. T...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.3401-3406
Main Authors: Balasubramanian, A., McMorrow, D., Nation, S.A., Bhuva, B.L., Reed, R.A., Massengill, L.W., Loveless, T.D., Amusan, O.A., Black, J.D., Melinger, J.S., Baze, M.P., Ferlet-Cavrois, V., Gaillardin, M., Schwank, J.R.
Format: Article
Language:English
Subjects:
Absorption
Circuit testing
Circuits
CMOS
CMOS process
CMOS technology
Complementary metal-oxide-semiconductor (CMOS)
Laboratories
laser
Lasers
metal-fill
Nanocomposites
Nanomaterials
Nanostructure
Optical design
Optical pulses
Power lasers
Pulse circuits
Pulsed lasers
single event (SE)
Single event upset
single-photon absorption (SPA)
Thresholds
two-photon absorption (TPA)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:single-photon (SPA) and two-photon laser absorption (TPA) techniques are established as reliable, effective methods to study specific single-event (SE) phenomena in advanced CMOS technologies. However, dense metal-fill in these nanoscale processes can prevent the use of top-side SPA in some cases. This paper demonstrates a novel methodology enabling top-side laser SPA single-event effects (SEEs) measurements in the presence of dense metal-fill for a test circuit fabricated in a commercial 90 nm CMOS process and validates it using unimpeded, through-wafer TPA approach. This is achieved by measuring and comparing the SEU thresholds for the sample circuit using both techniques.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2008.2007295