Reduction of dislocations in a (1 1 2¯ 2)GaN grown by selective MOVPE on (1 1 3)Si

• Published in: Journal of crystal growth 2009-05, Vol.311 (10), p.2879-2882
• Main Authors: Tanikawa, T., Kagohashi, Y., Honda, Y., Yamaguchi, M., Sawaki, N.
• Format: Article
• Language: English
• Subjects: A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Semiconducting III–V materials; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Exact sciences and technology; Linear defects: dislocations, disclinations; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Other semiconductors; Physics; Specific materials; Structure of solids and liquids; crystallography; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2009.01.109

Two-step selective epitaxy (SAG/ELO) of (1 1 2¯ 2)GaN on (1 1 3)Si substrate is studied to reduce the defect density in the epitaxial lateral overgrowth. The first SAG/ELO is to prepare a (1 1 2¯ 2)GaN template on a (1 1 3)Si and the second SAG/ELO is to get a uniform (1 1 2¯ 2)GaN. It is found that the reduction of the defect density is improved by optimizing the mask configuration in the second SAG/ELO. The minimum dark spot density obtained is 3×10 7/cm 2, which is two orders of magnitude lower than that found in a (0 0 0 1)GaN grown on (1 1 1)Si.