Surface passivation and implications on high mobility channel performance (Invited Paper)

We review our recent studies of the passivation of the GaAs and InGaAs surface using a combination of in situ and ex situ surface analysis and capacitor measurements. We find that the control of Ga-oxides in particular appears to play an important role in understanding the characteristics of III–V M...

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Bibliographic Details
Published in:Microelectronic engineering 2009-07, Vol.86 (7), p.1544-1549
Main Authors: Hinkle, C.L., Milojevic, M., Vogel, E.M., Wallace, R.M.
Format: Article
Language:English
Subjects:
ALD
Alternate channel
Applied sciences
Compound structure devices
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
High mobility
III–V MOS
Oxidation states
Passivation
Pinning
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We review our recent studies of the passivation of the GaAs and InGaAs surface using a combination of in situ and ex situ surface analysis and capacitor measurements. We find that the control of Ga-oxides in particular appears to play an important role in understanding the characteristics of III–V MOS devices.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.030