Scalable Model of Substrate Resistance Components in RF MOSFETs With Bar-Type Body Contact Considered Layout Dimensions

Scalable model of substrate resistance components for radio-frequency MOSFETs fabricated by 65-nm CMOS technology with the bar-type body contact set in a horizontal direction to gate poly is presented. We consider various layout dimensions, such as channel length; unit finger width; number of finger...

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Bibliographic Details
Published in:IEEE electron device letters 2009-04, Vol.30 (4), p.404-406
Main Authors: IN MAN KANG, JUNG, Seung-Jae, CHOI, Tae-Hoon, LEE, Hyunwoo, JO, Gwangdoo, KIM, Young-Kwang, KIM, Han-Gu, CHOI, Kyu-Myung
Format: Article
Language:English
Subjects:
Admittance
Applied sciences
Channels
CMOS
CMOS technology
Contact
Contact resistance
Design. Technologies. Operation analysis. Testing
Devices
Electrical impedance
Electronics
Exact sciences and technology
Fingers
Gates
Geometry
Immune system
Integrated circuits
MOSFETs
Parameter extraction
Radio frequency
radio-frequency (RF) MOSFETs
scalable model
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid modeling
substrate resistance network
Transistors
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Summary:Scalable model of substrate resistance components for radio-frequency MOSFETs fabricated by 65-nm CMOS technology with the bar-type body contact set in a horizontal direction to gate poly is presented. We consider various layout dimensions, such as channel length; unit finger width; number of fingers; distance between body contact and active region; and gate poly to gate poly distance on substrate resistance modeling. By using our model, the output admittance of the MOSFETs is well matched up to 50 GHz. The proposed models for substrate resistance are more accurate for devices with various geometries than previous substrate resistance models.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2014085