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Scalable Model of Substrate Resistance Components in RF MOSFETs With Bar-Type Body Contact Considered Layout Dimensions

Scalable model of substrate resistance components for radio-frequency MOSFETs fabricated by 65-nm CMOS technology with the bar-type body contact set in a horizontal direction to gate poly is presented. We consider various layout dimensions, such as channel length; unit finger width; number of finger...

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Published in:	IEEE electron device letters 2009-04, Vol.30 (4), p.404-406
Main Authors:	IN MAN KANG, JUNG, Seung-Jae, CHOI, Tae-Hoon, LEE, Hyunwoo, JO, Gwangdoo, KIM, Young-Kwang, KIM, Han-Gu, CHOI, Kyu-Myung
Format:	Article
Language:	English
Subjects:	Admittance Applied sciences Channels CMOS CMOS technology Contact Contact resistance Design. Technologies. Operation analysis. Testing Devices Electrical impedance Electronics Exact sciences and technology Fingers Gates Geometry Immune system Integrated circuits MOSFETs Parameter extraction Radio frequency radio-frequency (RF) MOSFETs scalable model Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid modeling substrate resistance network Transistors
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cited_by	cdi_FETCH-LOGICAL-c298t-63dad87aa886d5fb20a9fc6f7688006c0f93bb9e3e65e58993192c354a001beb3
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container_end_page	406
container_issue	4
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container_title	IEEE electron device letters
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creator	IN MAN KANG JUNG, Seung-Jae CHOI, Tae-Hoon LEE, Hyunwoo JO, Gwangdoo KIM, Young-Kwang KIM, Han-Gu CHOI, Kyu-Myung
description	Scalable model of substrate resistance components for radio-frequency MOSFETs fabricated by 65-nm CMOS technology with the bar-type body contact set in a horizontal direction to gate poly is presented. We consider various layout dimensions, such as channel length; unit finger width; number of fingers; distance between body contact and active region; and gate poly to gate poly distance on substrate resistance modeling. By using our model, the output admittance of the MOSFETs is well matched up to 50 GHz. The proposed models for substrate resistance are more accurate for devices with various geometries than previous substrate resistance models.
doi_str_mv	10.1109/LED.2009.2014085
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We consider various layout dimensions, such as channel length; unit finger width; number of fingers; distance between body contact and active region; and gate poly to gate poly distance on substrate resistance modeling. By using our model, the output admittance of the MOSFETs is well matched up to 50 GHz. The proposed models for substrate resistance are more accurate for devices with various geometries than previous substrate resistance models.</description><subject>Admittance</subject><subject>Applied sciences</subject><subject>Channels</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Contact</subject><subject>Contact resistance</subject><subject>Design. Technologies. Operation analysis. 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subjects	Admittance Applied sciences Channels CMOS CMOS technology Contact Contact resistance Design. Technologies. Operation analysis. Testing Devices Electrical impedance Electronics Exact sciences and technology Fingers Gates Geometry Immune system Integrated circuits MOSFETs Parameter extraction Radio frequency radio-frequency (RF) MOSFETs scalable model Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid modeling substrate resistance network Transistors
title	Scalable Model of Substrate Resistance Components in RF MOSFETs With Bar-Type Body Contact Considered Layout Dimensions
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