Self-Stabilization in Amorphous Silicon Circuits

Thin-film transistors (TFTs) based on disordered semiconductors such as amorphous hydrogenated silicon (a-Si:H) experience a threshold voltage (VT) shift with time in the presence of a gate bias. The VT shift needs to be compensated for circuit applications. We study an interesting property of self-...

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Bibliographic Details
Published in:IEEE electron device letters 2009-01, Vol.30 (1), p.45-47
Main Authors: Sambandan, S., Street, R.A.
Format: Article
Language:English
Subjects:
Amorphous materials
Amorphous semiconductors
Amorphous silicon
Analog circuits
Applied sciences
circuit
Circuit properties
Circuit testing
Circuits
Devices
Dielectric devices
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Glass
Mirrors
Monitoring
organic
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Silicon
Thin film transistors
Threshold voltage
threshold voltage (VT)
Transistors
Vices
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Summary:Thin-film transistors (TFTs) based on disordered semiconductors such as amorphous hydrogenated silicon (a-Si:H) experience a threshold voltage (VT) shift with time in the presence of a gate bias. The VT shift needs to be compensated for circuit applications. We study an interesting property of self-compensation in fundamental analog TFT circuits with one a part of the circuit compensating for the effects of VT shift in the other and vice versa.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2009010