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Topology Analysis and Design of Passive HEMT Millimeter-Wave Multiple-Port Switches
This paper discusses different topologies for millimeter-wave (MMW) multiple-port switches, and analyzes the insertion loss, isolation, and limitation of bandwidth. It is observed the performances of a MMW multiple-port switch are decided by both multiple-port topology and the structure of the const...
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Published in: | IEEE transactions on microwave theory and techniques 2008-07, Vol.56 (7), p.1545-1554 |
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creator | Ruei Bin Lai Shih Fong Chao Zuo Min Tsai Lee, J. Huei Wang |
description | This paper discusses different topologies for millimeter-wave (MMW) multiple-port switches, and analyzes the insertion loss, isolation, and limitation of bandwidth. It is observed the performances of a MMW multiple-port switch are decided by both multiple-port topology and the structure of the constituted unit single-pole-single-throw switches, but dominated by its topology. To verify the analysis, two types of multiple-port switch are designed, one is a distributed switch and the other is based on a filter-integrated switch, using different topologies. The net-type multiple-port topology based on a distributed switch demonstrates a measured insertion loss of 4-5 dB with isolation better than 25 dB in 48-65 GHz. In 43-66 GHz, the binary-ring multiple-port topology based on a filter-integrated switch shows a measured insertion loss of 3-4.5 dB with isolation better than 30 dB. |
doi_str_mv | 10.1109/TMTT.2008.924352 |
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It is observed the performances of a MMW multiple-port switch are decided by both multiple-port topology and the structure of the constituted unit single-pole-single-throw switches, but dominated by its topology. To verify the analysis, two types of multiple-port switch are designed, one is a distributed switch and the other is based on a filter-integrated switch, using different topologies. The net-type multiple-port topology based on a distributed switch demonstrates a measured insertion loss of 4-5 dB with isolation better than 25 dB in 48-65 GHz. In 43-66 GHz, the binary-ring multiple-port topology based on a filter-integrated switch shows a measured insertion loss of 3-4.5 dB with isolation better than 30 dB.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2008.924352</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bandwidth ; Circuit properties ; Circuit topology ; Communication switching ; Design engineering ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; FETs ; HEMT ; HEMTs ; High electron mobility transistors ; Insertion loss ; Integrated circuits ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; Millimeter wave communication ; Millimeter wave transistors ; MMICs ; monolithic microwave integrated circuit (MMIC) ; multiple port ; Noise levels ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; single-pole single-throw (SPST) ; switch ; Switches ; Switching, multiplexing, switched capacity circuits ; Topology</subject><ispartof>IEEE transactions on microwave theory and techniques, 2008-07, Vol.56 (7), p.1545-1554</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c449t-3c51446b870dfead58b6a2d559b8aad5b993c0ade211eee69a0b52425097c4a3</citedby><cites>FETCH-LOGICAL-c449t-3c51446b870dfead58b6a2d559b8aad5b993c0ade211eee69a0b52425097c4a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4531378$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,54771</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20498575$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ruei Bin Lai</creatorcontrib><creatorcontrib>Shih Fong Chao</creatorcontrib><creatorcontrib>Zuo Min Tsai</creatorcontrib><creatorcontrib>Lee, J.</creatorcontrib><creatorcontrib>Huei Wang</creatorcontrib><title>Topology Analysis and Design of Passive HEMT Millimeter-Wave Multiple-Port Switches</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This paper discusses different topologies for millimeter-wave (MMW) multiple-port switches, and analyzes the insertion loss, isolation, and limitation of bandwidth. It is observed the performances of a MMW multiple-port switch are decided by both multiple-port topology and the structure of the constituted unit single-pole-single-throw switches, but dominated by its topology. To verify the analysis, two types of multiple-port switch are designed, one is a distributed switch and the other is based on a filter-integrated switch, using different topologies. The net-type multiple-port topology based on a distributed switch demonstrates a measured insertion loss of 4-5 dB with isolation better than 25 dB in 48-65 GHz. In 43-66 GHz, the binary-ring multiple-port topology based on a filter-integrated switch shows a measured insertion loss of 3-4.5 dB with isolation better than 30 dB.</description><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Circuit properties</subject><subject>Circuit topology</subject><subject>Communication switching</subject><subject>Design engineering</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>HEMT</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Insertion loss</subject><subject>Integrated circuits</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>Millimeter wave communication</subject><subject>Millimeter wave transistors</subject><subject>MMICs</subject><subject>monolithic microwave integrated circuit (MMIC)</subject><subject>multiple port</subject><subject>Noise levels</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Solid state devices</topic><topic>single-pole single-throw (SPST)</topic><topic>switch</topic><topic>Switches</topic><topic>Switching, multiplexing, switched capacity circuits</topic><topic>Topology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ruei Bin Lai</creatorcontrib><creatorcontrib>Shih Fong Chao</creatorcontrib><creatorcontrib>Zuo Min Tsai</creatorcontrib><creatorcontrib>Lee, J.</creatorcontrib><creatorcontrib>Huei Wang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEL</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ruei Bin Lai</au><au>Shih Fong Chao</au><au>Zuo Min Tsai</au><au>Lee, J.</au><au>Huei Wang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Topology Analysis and Design of Passive HEMT Millimeter-Wave Multiple-Port Switches</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2008-07-01</date><risdate>2008</risdate><volume>56</volume><issue>7</issue><spage>1545</spage><epage>1554</epage><pages>1545-1554</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This paper discusses different topologies for millimeter-wave (MMW) multiple-port switches, and analyzes the insertion loss, isolation, and limitation of bandwidth. It is observed the performances of a MMW multiple-port switch are decided by both multiple-port topology and the structure of the constituted unit single-pole-single-throw switches, but dominated by its topology. To verify the analysis, two types of multiple-port switch are designed, one is a distributed switch and the other is based on a filter-integrated switch, using different topologies. The net-type multiple-port topology based on a distributed switch demonstrates a measured insertion loss of 4-5 dB with isolation better than 25 dB in 48-65 GHz. In 43-66 GHz, the binary-ring multiple-port topology based on a filter-integrated switch shows a measured insertion loss of 3-4.5 dB with isolation better than 30 dB.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2008.924352</doi><tpages>10</tpages></addata></record> |
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subjects | Applied sciences Bandwidth Circuit properties Circuit topology Communication switching Design engineering Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology FETs HEMT HEMTs High electron mobility transistors Insertion loss Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave communication Millimeter wave transistors MMICs monolithic microwave integrated circuit (MMIC) multiple port Noise levels Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices single-pole single-throw (SPST) switch Switches Switching, multiplexing, switched capacity circuits Topology |
title | Topology Analysis and Design of Passive HEMT Millimeter-Wave Multiple-Port Switches |
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