Evaluation of local strain in Si using UV-Raman spectroscopy

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2009-03, Vol.159, p.206-211
• Main Authors: Ogura, Atsushi, Kosemura, Daisuke, Takei, Munehisa, Uchida, Hidetsugu, Hattori, Nobuyoshi, Yoshimaru, Masaki, Mayuzumi, Satoru, Wakabayashi, Hitoshi
• Format: Article
• Language: English
• Subjects: Raman spectroscopy; Semiconductor devices; Silicon
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2008.10.059

“Strained-Si”, in which intentional strain is introduced in Si crystal to improve carrier mobility by using a modulated band structure, is recognized as one of the most important technologies in post-scaling-generation LSIs. Strain-evaluation technology to probe strain in shallow surfaces that correspond to the channels of MOSFETs is crucial to achieving strained-Si technology. In this paper, we introduce the results we obtained by evaluating strain with the new UV-Raman spectroscopy we developed. Quasi-line shape illumination enabled Raman measurements with 200-nm intervals on the sample. The local-strain mechanism caused by SiN stressors covering a MOSFET was clarified by measuring one-dimensional strain profiles induced by patterned SiN film on Si. We also demonstrated that the induced strain was proportional to the inner stresses of SiN film and that it is more effective to introduce strain in SOI substrates than in bulk substrates. In the evaluation of a actual device fabricated by using the gate-last process in which strain was significantly enhanced after the dummy gate was removed, the size effect, i.e., an increase in induced strain with a decrease in gate length, was confirmed through one-dimensional strain-profile measurements with various gate lengths.