Thermal Study of the High-Frequency Noise in GaN HEMTs

The high-frequency noise performance of the GaN HEMT is studied for temperatures between 297-398 K. The access resistances R S and R D have a limiting effect on the noise performance, and in this paper, their temperature dependence is studied in detail for a 2 times 100 mum GaN HEMT. R S and R D sho...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2009-01, Vol.57 (1), p.19-26
Main Authors: Thorsell, M., Andersson, K., Fagerlind, M., Sudow, M., Nilsson, P.-A., Rorsman, N.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Applied sciences
Circuits
Constraining
Electrical resistance measurement
Electronics
Exact sciences and technology
Gallium nitride
Gallium nitride (GaN)
Gallium nitride (GaN) modeling noise temperature measurement thermal resistance
Gallium nitrides
HEMTs
High electron mobility transistors
Infrared
Microscopy
Microwaves
modeling
MODFETs
Noise
Noise figure
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature dependence
temperature measurement
Thermal resistance
Transceivers
Transistors
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Summary:The high-frequency noise performance of the GaN HEMT is studied for temperatures between 297-398 K. The access resistances R S and R D have a limiting effect on the noise performance, and in this paper, their temperature dependence is studied in detail for a 2 times 100 mum GaN HEMT. R S and R D show an increase of 0.71 and 0.86 %/K, respectively. The self-heating effect due to dissipated power is also studied to allow accurate intrinsic small-signal and noise parameter extraction. The thermal resistance is measured by infrared microscopy. Based on these results, a temperature dependent noise model including self-heating and temperature-dependent access resistances is derived and verified with measurements.
ISSN:0018-9480
1557-9670
1557-9670
DOI:10.1109/TMTT.2008.2009084